Aluminium-induced crystallization of silicon thin film by excimer laser annealing

Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the cr...

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Main Authors: Siti Noraiza Ab Razak, Noriah Bidin
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2013
Online Access:http://journalarticle.ukm.my/5907/
http://journalarticle.ukm.my/5907/
http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf
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recordtype eprints
spelling ukm-59072016-12-14T06:39:49Z http://journalarticle.ukm.my/5907/ Aluminium-induced crystallization of silicon thin film by excimer laser annealing Siti Noraiza Ab Razak, Noriah Bidin, Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10% aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350°C. Secondly, the poly-Si underwent excimer laser anneling (ELA). The microstructure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm-2. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf Siti Noraiza Ab Razak, and Noriah Bidin, (2013) Aluminium-induced crystallization of silicon thin film by excimer laser annealing. Sains Malaysiana, 42 (2). pp. 219-222. ISSN 0126-6039 http://www.ukm.my/jsm/
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institution Universiti Kebangasaan Malaysia
building UKM Institutional Repository
collection Online Access
language English
description Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10% aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350°C. Secondly, the poly-Si underwent excimer laser anneling (ELA). The microstructure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm-2.
format Article
author Siti Noraiza Ab Razak,
Noriah Bidin,
spellingShingle Siti Noraiza Ab Razak,
Noriah Bidin,
Aluminium-induced crystallization of silicon thin film by excimer laser annealing
author_facet Siti Noraiza Ab Razak,
Noriah Bidin,
author_sort Siti Noraiza Ab Razak,
title Aluminium-induced crystallization of silicon thin film by excimer laser annealing
title_short Aluminium-induced crystallization of silicon thin film by excimer laser annealing
title_full Aluminium-induced crystallization of silicon thin film by excimer laser annealing
title_fullStr Aluminium-induced crystallization of silicon thin film by excimer laser annealing
title_full_unstemmed Aluminium-induced crystallization of silicon thin film by excimer laser annealing
title_sort aluminium-induced crystallization of silicon thin film by excimer laser annealing
publisher Universiti Kebangsaan Malaysia
publishDate 2013
url http://journalarticle.ukm.my/5907/
http://journalarticle.ukm.my/5907/
http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf
first_indexed 2023-09-18T19:45:29Z
last_indexed 2023-09-18T19:45:29Z
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