Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-d...
Main Authors: | Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman |
---|---|
Format: | Article |
Language: | English |
Published: |
Universiti Kebangsaan Malaysia
2013
|
Online Access: | http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf |
Similar Items
-
Effect of plasma power and flow rate of silane gas on diameter of silicon nanowires grown by plasma enhanced chemical vapor deposition
by: Habib Hamidinezhad,, et al.
Published: (2011) -
Review—Critical considerations of high quality graphene
synthesized by plasma-enhanced chemical vapor deposition for
electronic and energy storage devices
by: Mohd Abid, Mohd Asyadi Azam, et al.
Published: (2017) -
Effect of synthesis condition on the growth of SWCNTs via catalytic chemical vapor deposition
by: Setareh Monshi Toussi,, et al.
Published: (2011) -
Influence of mixed convection in atmospheric pressure chemical vapor deposition of graphene growth
by: Fauzi, Fatin Bazilah, et al.
Published: (2019) -
Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
by: Ramlan, Amir Hakimi, et al.
Published: (2019)