Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism

Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-d...

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Main Authors:	Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2013
Online Access:	http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf

id	ukm-5901
recordtype	eprints
spelling	ukm-59012016-12-14T06:39:48Z http://journalarticle.ukm.my/5901/ Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf Yussof Wahab, and Habib Hamidinezhad, and Zulkafli Othaman, (2013) Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism. Sains Malaysiana, 42 (2). pp. 183-186. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer.
format	Article
author	Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman,
spellingShingle	Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
author_facet	Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman,
author_sort	Yussof Wahab,
title	Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
title_short	Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
title_full	Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
title_fullStr	Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
title_full_unstemmed	Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
title_sort	si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via vls mechanism
publisher	Universiti Kebangsaan Malaysia
publishDate	2013
url	http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf
first_indexed	2023-09-18T19:45:28Z
last_indexed	2023-09-18T19:45:28Z
_version_	1777405870718582784

Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism

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