Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films

Ba0.6Sr0.4TiO3 (BST) thin films were prepared on TiO2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 55oC with 50oC interval for 30 min in air. The microstructure and electrical properties of BST were then inves...

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Main Authors:	Ibrahim, N.B, Yusrianto, E, Zalita, Z, Ibarahim, Z
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2012
Online Access:	http://journalarticle.ukm.my/3587/ http://journalarticle.ukm.my/3587/ http://journalarticle.ukm.my/3587/1/10%2520N.B.%2520Ibrahim.pdf

id	ukm-3587
recordtype	eprints
spelling	ukm-35872016-12-14T06:34:52Z http://journalarticle.ukm.my/3587/ Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films Ibrahim, N.B Yusrianto, E Zalita, Z Ibarahim, Z Ba0.6Sr0.4TiO3 (BST) thin films were prepared on TiO2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 55oC with 50oC interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700oC. However with buffer layer, 700oC is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO2 buffer layer increased the current density. The dielectric constant, εr´ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the εr’ value with the increment of the annealing temperature. Universiti Kebangsaan Malaysia 2012-03 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/3587/1/10%2520N.B.%2520Ibrahim.pdf Ibrahim, N.B and Yusrianto, E and Zalita, Z and Ibarahim, Z (2012) Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films. Sains Malaysiana, 41 (3). pp. 339-344. ISSN 0126-6039 http://www.ukm.my/jsm/contents.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Ba0.6Sr0.4TiO3 (BST) thin films were prepared on TiO2 buffer layers. The buffer layers were prepared using sol-gel method, followed by annealing process at different temperature from 300 to 55oC with 50oC interval for 30 min in air. The microstructure and electrical properties of BST were then investigated. Increasing the annealing temperature increased. The buffer layer thickness BST films prepared on thicker buffer layer showed improved crystallinity. Without the buffer layer, BST crystallization cannot occur at 700oC. However with buffer layer, 700oC is sufficient for the process to occur. The BST grain size increased with the buffer grains increment. The existence of TiO2 buffer layer increased the current density. The dielectric constant, εr´ and dielectric loss were not affected much by the buffer layer except at frequency around 1 kHz that showed an increment in the εr’ value with the increment of the annealing temperature.
format	Article
author	Ibrahim, N.B Yusrianto, E Zalita, Z Ibarahim, Z
spellingShingle	Ibrahim, N.B Yusrianto, E Zalita, Z Ibarahim, Z Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
author_facet	Ibrahim, N.B Yusrianto, E Zalita, Z Ibarahim, Z
author_sort	Ibrahim, N.B
title	Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
title_short	Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
title_full	Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
title_fullStr	Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
title_full_unstemmed	Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films
title_sort	effect of annealing temperature of sol-gel tio2 buffer layer on microstructure and electrical properties of ba0.6sr0.4tio3 films
publisher	Universiti Kebangsaan Malaysia
publishDate	2012
url	http://journalarticle.ukm.my/3587/ http://journalarticle.ukm.my/3587/ http://journalarticle.ukm.my/3587/1/10%2520N.B.%2520Ibrahim.pdf
first_indexed	2023-09-18T19:39:12Z
last_indexed	2023-09-18T19:39:12Z
_version_	1777405476500144128

Effect of annealing temperature of sol-gel TiO2 buffer layer on microstructure and electrical properties of Ba0.6Sr0.4TiO3 films

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