Characterization of Ge Nanostructures embedded inside porous silicon for photonics application

In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF)....

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Main Authors:	Abd Rahim .A.F, Hashim .M.R, Ali .N.K
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/2410/ http://journalarticle.ukm.my/2410/ http://journalarticle.ukm.my/2410/1/02_Abd_Rahim.pdf

id	ukm-2410
recordtype	eprints
spelling	ukm-24102016-12-14T06:31:32Z http://journalarticle.ukm.my/2410/ Characterization of Ge Nanostructures embedded inside porous silicon for photonics application Abd Rahim .A.F, Hashim .M.R, Ali .N.K, In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650οC for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400οC for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nanostructures in the porous silicon Universiti Kebangsaan Malaysia 2011-01 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/2410/1/02_Abd_Rahim.pdf Abd Rahim .A.F, and Hashim .M.R, and Ali .N.K, (2011) Characterization of Ge Nanostructures embedded inside porous silicon for photonics application. Sains Malaysiana, 40 (1). pp. 5-8. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	In this work we prepared germanium nanostructures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650οC for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400οC for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nanostructures in the porous silicon
format	Article
author	Abd Rahim .A.F, Hashim .M.R, Ali .N.K,
spellingShingle	Abd Rahim .A.F, Hashim .M.R, Ali .N.K, Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
author_facet	Abd Rahim .A.F, Hashim .M.R, Ali .N.K,
author_sort	Abd Rahim .A.F,
title	Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
title_short	Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
title_full	Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
title_fullStr	Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
title_full_unstemmed	Characterization of Ge Nanostructures embedded inside porous silicon for photonics application
title_sort	characterization of ge nanostructures embedded inside porous silicon for photonics application
publisher	Universiti Kebangsaan Malaysia
publishDate	2011
url	http://journalarticle.ukm.my/2410/ http://journalarticle.ukm.my/2410/ http://journalarticle.ukm.my/2410/1/02_Abd_Rahim.pdf
first_indexed	2023-09-18T19:36:01Z
last_indexed	2023-09-18T19:36:01Z
_version_	1777405275952644096

Characterization of Ge Nanostructures embedded inside porous silicon for photonics application

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