G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation

The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficien...

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Main Authors:	D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A., B.Y. Majlis, Homewood, K.P.
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:	http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf

id	ukm-13717
recordtype	eprints
spelling	ukm-137172019-11-29T09:03:23Z http://journalarticle.ukm.my/13717/ G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon. Penerbit Universiti Kebangsaan Malaysia 2019-06 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf D.D. Berhanuddin, and N.E.A. Razak, and Lourenço, M.A. and B.Y. Majlis, and Homewood, K.P. (2019) G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation. Sains Malaysiana, 48 (6). pp. 1251-1257. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil6_2019/KandunganJilid48Bil6_2019.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon.
format	Article
author	D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P.
spellingShingle	D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P. G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
author_facet	D.D. Berhanuddin, N.E.A. Razak, Lourenço, M.A. B.Y. Majlis, Homewood, K.P.
author_sort	D.D. Berhanuddin,
title	G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
title_short	G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
title_full	G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
title_fullStr	G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
title_full_unstemmed	G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation
title_sort	g-centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and proton irradiation
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2019
url	http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/ http://journalarticle.ukm.my/13717/1/12%20D.D.%20Berhanuddin.pdf
first_indexed	2023-09-18T20:05:29Z
last_indexed	2023-09-18T20:05:29Z
_version_	1777407129427116032

G-Centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and Proton irradiation

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