The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application

Distribution of gold nanoparticles (AuNPs) on a substrate becomes crucial in nanotechnology applications. This work describes a route to fabricate AuNPs directly on silicon substrates by using an aluminum template in hydrothermal reaction at 80°C for 1 h. The effect of aluminum nitrate (Al(NO3)3) co...

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Main Authors:	Ng, S.A., K.A. Razak, Cheong, K.Y., Aw, K.C.
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2016
Online Access:	http://journalarticle.ukm.my/10179/ http://journalarticle.ukm.my/10179/ http://journalarticle.ukm.my/10179/1/06%20S.A.%20Ng%20.pdf

id	ukm-10179
recordtype	eprints
spelling	ukm-101792017-03-06T08:00:55Z http://journalarticle.ukm.my/10179/ The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application Ng, S.A. K.A. Razak, Cheong, K.Y. Aw, K.C. Distribution of gold nanoparticles (AuNPs) on a substrate becomes crucial in nanotechnology applications. This work describes a route to fabricate AuNPs directly on silicon substrates by using an aluminum template in hydrothermal reaction at 80°C for 1 h. The effect of aluminum nitrate (Al(NO3)3) concentration in the hydrothermal bath was investigated. The properties of AuNPs were studied using field-emission scanning electron microscope (FESEM), x-ray diffractometer (XRD) and semiconductor characterization system (SCS). Two distinct sizes of AuNPs were observed by FESEM. XRD analysis proved the formation of AuNPs directly on the substrate. AuNPs were embedded between polymethylsilsesquioxane (PMSSQ) in order to investigate their effect on memory properties. The sample grown in 0.1 M Al(NO3)3 exhibited the largest hysteresis window (2.6 V) and the lowest Vth (2.2 V) to turn ‘ON’ the memory device. This indicated that good distribution of FCC structure AuNPs with 80±4 nm and 42±7 nm of large and small particles produced better charge storage capability. Charge transport mechanisms of AuNPs embedded in PMSSQ were explained in details whereby electrons from Si are transported across the barrier by thermionic effects via field-assisted lowering at the Si-PMSSQ interface with the combination of the Schottky and Poole Frenkel emission effect in Region 1. Trapped charge limited current (TCLC) and space charge limited current (SCLC) transport mechanism occurred in Region 2 and Region 3. Penerbit Universiti Kebangsaan Malaysia 2016-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/10179/1/06%20S.A.%20Ng%20.pdf Ng, S.A. and K.A. Razak, and Cheong, K.Y. and Aw, K.C. (2016) The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application. Sains Malaysiana, 45 (8). pp. 1213-1219. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid45bil8_2016/KandunganJilid45Bil8_2016.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Distribution of gold nanoparticles (AuNPs) on a substrate becomes crucial in nanotechnology applications. This work describes a route to fabricate AuNPs directly on silicon substrates by using an aluminum template in hydrothermal reaction at 80°C for 1 h. The effect of aluminum nitrate (Al(NO3)3) concentration in the hydrothermal bath was investigated. The properties of AuNPs were studied using field-emission scanning electron microscope (FESEM), x-ray diffractometer (XRD) and semiconductor characterization system (SCS). Two distinct sizes of AuNPs were observed by FESEM. XRD analysis proved the formation of AuNPs directly on the substrate. AuNPs were embedded between polymethylsilsesquioxane (PMSSQ) in order to investigate their effect on memory properties. The sample grown in 0.1 M Al(NO3)3 exhibited the largest hysteresis window (2.6 V) and the lowest Vth (2.2 V) to turn ‘ON’ the memory device. This indicated that good distribution of FCC structure AuNPs with 80±4 nm and 42±7 nm of large and small particles produced better charge storage capability. Charge transport mechanisms of AuNPs embedded in PMSSQ were explained in details whereby electrons from Si are transported across the barrier by thermionic effects via field-assisted lowering at the Si-PMSSQ interface with the combination of the Schottky and Poole Frenkel emission effect in Region 1. Trapped charge limited current (TCLC) and space charge limited current (SCLC) transport mechanism occurred in Region 2 and Region 3.
format	Article
author	Ng, S.A. K.A. Razak, Cheong, K.Y. Aw, K.C.
spellingShingle	Ng, S.A. K.A. Razak, Cheong, K.Y. Aw, K.C. The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
author_facet	Ng, S.A. K.A. Razak, Cheong, K.Y. Aw, K.C.
author_sort	Ng, S.A.
title	The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
title_short	The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
title_full	The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
title_fullStr	The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
title_full_unstemmed	The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application
title_sort	effect of al(no3)3 concentration on the formation of aunps using low temperature hydrothermal reaction for memory application
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2016
url	http://journalarticle.ukm.my/10179/ http://journalarticle.ukm.my/10179/ http://journalarticle.ukm.my/10179/1/06%20S.A.%20Ng%20.pdf
first_indexed	2023-09-18T19:56:44Z
last_indexed	2023-09-18T19:56:44Z
_version_	1777406578971901952

The effect of Al(NO3)3 concentration on the formation of AuNPs using low temperature hydrothermal reaction for memory application

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