Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad
This study is carried out to introduce new active layers in a Schottky diode for a metal-semiconductor field effect transistor (MESFET) device structure, which are novel aligned zinc oxide (ZnO) nanorod arrays and aligned carbon nanotubes (CNT) arrays. Both nanomaterials are successfully synthesized...
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Institute of Graduate Studies, UiTM
2012
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Online Access: | http://ir.uitm.edu.my/id/eprint/19150/ http://ir.uitm.edu.my/id/eprint/19150/1/ABS_SALINA%20MUHAMAD%20TDRA%20VOL%202%20IGS%2012.pdf |
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uitm-191502018-06-11T06:42:45Z http://ir.uitm.edu.my/id/eprint/19150/ Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad Muhamad, Salina Malaysia This study is carried out to introduce new active layers in a Schottky diode for a metal-semiconductor field effect transistor (MESFET) device structure, which are novel aligned zinc oxide (ZnO) nanorod arrays and aligned carbon nanotubes (CNT) arrays. Both nanomaterials are successfully synthesized using the Chemical Bath Deposition (CBD) and Chemical Vapor Deposition (CVD) methods, respectively, which in nanoscale, exhibit 1-dimensional structure and quantum confinement effects that lead to better properties. Prior to the synthesis process, the novel seed layer, which is the Mg0.3Zn0.7O thin film, is introduced. Institute of Graduate Studies, UiTM 2012 Book Section PeerReviewed text en http://ir.uitm.edu.my/id/eprint/19150/1/ABS_SALINA%20MUHAMAD%20TDRA%20VOL%202%20IGS%2012.pdf Muhamad, Salina (2012) Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad. In: The Doctoral Research Abstracts. IPSis Biannual Publication, 2 (2). Institute of Graduate Studies, UiTM, Shah Alam. |
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UiTM Institutional Repository |
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Online Access |
language |
English |
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Malaysia |
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Malaysia Muhamad, Salina Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
description |
This study is carried out to introduce new active layers in a Schottky diode for a metal-semiconductor field effect transistor (MESFET) device structure, which are novel aligned zinc oxide (ZnO) nanorod arrays and aligned carbon nanotubes (CNT) arrays. Both nanomaterials are successfully synthesized using the Chemical Bath Deposition (CBD) and Chemical Vapor Deposition (CVD) methods, respectively, which in nanoscale, exhibit 1-dimensional structure and quantum confinement effects that lead to better properties. Prior to the synthesis process, the novel seed layer, which is the Mg0.3Zn0.7O thin film, is introduced. |
format |
Book Section |
author |
Muhamad, Salina |
author_facet |
Muhamad, Salina |
author_sort |
Muhamad, Salina |
title |
Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
title_short |
Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
title_full |
Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
title_fullStr |
Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
title_full_unstemmed |
Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad |
title_sort |
schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / salina muhamad |
publisher |
Institute of Graduate Studies, UiTM |
publishDate |
2012 |
url |
http://ir.uitm.edu.my/id/eprint/19150/ http://ir.uitm.edu.my/id/eprint/19150/1/ABS_SALINA%20MUHAMAD%20TDRA%20VOL%202%20IGS%2012.pdf |
first_indexed |
2023-09-18T23:01:57Z |
last_indexed |
2023-09-18T23:01:57Z |
_version_ |
1777418232635850752 |