Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman

Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman

Lead zirconate titanate (PZT) and lead niobate zirconate titanate (PNZT) belong to the ferroelectric family. They have high dielectric constants whereby the use of these materials allows reduction of circuit size. This research is focused on microwave characterization of films made of these material...

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Main Author: Sulaiman, Suhana
Format: Book Section
Language:English
Published: Institute of Graduate Studies, UiTM 2013
Subjects:
Malaysia
Online Access:http://ir.uitm.edu.my/id/eprint/19112/
http://ir.uitm.edu.my/id/eprint/19112/1/ABS_SUHANA%20SULAIMAN%20TDRA%20VOL%204%20IGS%2013.pdf
id uitm-19112
recordtype eprints
spelling uitm-191122018-06-11T01:17:23Z http://ir.uitm.edu.my/id/eprint/19112/ Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman Sulaiman, Suhana Malaysia Lead zirconate titanate (PZT) and lead niobate zirconate titanate (PNZT) belong to the ferroelectric family. They have high dielectric constants whereby the use of these materials allows reduction of circuit size. This research is focused on microwave characterization of films made of these materials for monolithic microwave integrated circuit (MMIC) applications. Both films are deposited on silicon substrates using different deposition techniques. PZT films are deposited with sputtering to give thickness of 0.5 mm. The films have morphotrobic boundary phase since their Zr/Ti ratio is 50/50. In contrast, PNZT films are grown using metal organic deposition to give thickness of 1 mm. PNZT films are doped with 4 % of niobium (Nb) with a Zr/Ti ratio of 20/80. Capacitors and transmission lines made of PZT and PNZT were fabricated using standard semiconductor processing. High frequency wafer probes were used to carry out microwave measurement from 5 to 20 GHz, and from this the results were used to correlate microstructure properties to high frequency behavior. X-ray diffraction and scanning electron microscopy were employed to investigate grain texture and crystalline properties. The X-ray diffraction results show that PNZT has higher peak of intensity as compared to PZT… Institute of Graduate Studies, UiTM 2013 Book Section PeerReviewed text en http://ir.uitm.edu.my/id/eprint/19112/1/ABS_SUHANA%20SULAIMAN%20TDRA%20VOL%204%20IGS%2013.pdf Sulaiman, Suhana (2013) Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman. In: The Doctoral Research Abstracts. IPSis Biannual Publication, 4 (4). Institute of Graduate Studies, UiTM, Shah Alam.
repository_type Digital Repository
institution_category Local University
institution Universiti Teknologi MARA
building UiTM Institutional Repository
collection Online Access
language English
topic Malaysia
spellingShingle Malaysia
Sulaiman, Suhana
Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
description Lead zirconate titanate (PZT) and lead niobate zirconate titanate (PNZT) belong to the ferroelectric family. They have high dielectric constants whereby the use of these materials allows reduction of circuit size. This research is focused on microwave characterization of films made of these materials for monolithic microwave integrated circuit (MMIC) applications. Both films are deposited on silicon substrates using different deposition techniques. PZT films are deposited with sputtering to give thickness of 0.5 mm. The films have morphotrobic boundary phase since their Zr/Ti ratio is 50/50. In contrast, PNZT films are grown using metal organic deposition to give thickness of 1 mm. PNZT films are doped with 4 % of niobium (Nb) with a Zr/Ti ratio of 20/80. Capacitors and transmission lines made of PZT and PNZT were fabricated using standard semiconductor processing. High frequency wafer probes were used to carry out microwave measurement from 5 to 20 GHz, and from this the results were used to correlate microstructure properties to high frequency behavior. X-ray diffraction and scanning electron microscopy were employed to investigate grain texture and crystalline properties. The X-ray diffraction results show that PNZT has higher peak of intensity as compared to PZT…
format Book Section
author Sulaiman, Suhana
author_facet Sulaiman, Suhana
author_sort Sulaiman, Suhana
title Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
title_short Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
title_full Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
title_fullStr Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
title_full_unstemmed Implementation of lead niobate zirconate titanate (PNZT) thin films as passive monolithic microwave integrated circuit elements / Suhana Sulaiman
title_sort implementation of lead niobate zirconate titanate (pnzt) thin films as passive monolithic microwave integrated circuit elements / suhana sulaiman
publisher Institute of Graduate Studies, UiTM
publishDate 2013
url http://ir.uitm.edu.my/id/eprint/19112/
http://ir.uitm.edu.my/id/eprint/19112/1/ABS_SUHANA%20SULAIMAN%20TDRA%20VOL%204%20IGS%2013.pdf
first_indexed 2023-09-18T23:01:52Z
last_indexed 2023-09-18T23:01:52Z
_version_ 1777418227373047808

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