Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail

Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical val...

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Main Authors:	Mohamat Kasim, Nazirah, Radzali, Rosfariza, Ismail, Ahmad Puad
Format:	Article
Language:	English
Published:	Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA) 2010
Online Access:	http://ir.uitm.edu.my/id/eprint/16338/ http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf

id	uitm-16338
recordtype	eprints
spelling	uitm-163382019-11-15T02:23:22Z http://ir.uitm.edu.my/id/eprint/16338/ Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail Mohamat Kasim, Nazirah Radzali, Rosfariza Ismail, Ahmad Puad Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. The electrical parameter was extracted to investigate the device characteristics. Several design analyses were performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produce the graph of drain current versus drain voltage, lD-VG and drain current versus gate voltage, lD-VG . From lD-VG can be obtained the threshold voltage, VT in which VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length LG obtained from the simulation for NMOS and PMOS is the same which is 0.235 micron and it is nearest to the scale for this research work. Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA) 2010 Article PeerReviewed text en http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf Mohamat Kasim, Nazirah and Radzali, Rosfariza and Ismail, Ahmad Puad (2010) Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail. Esteem Academic Journal, 6 (1). pp. 73-83. ISSN 1675-7939
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Teknologi MARA
building	UiTM Institutional Repository
collection	Online Access
language	English
description	Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. The electrical parameter was extracted to investigate the device characteristics. Several design analyses were performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produce the graph of drain current versus drain voltage, lD-VG and drain current versus gate voltage, lD-VG . From lD-VG can be obtained the threshold voltage, VT in which VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length LG obtained from the simulation for NMOS and PMOS is the same which is 0.235 micron and it is nearest to the scale for this research work.
format	Article
author	Mohamat Kasim, Nazirah Radzali, Rosfariza Ismail, Ahmad Puad
spellingShingle	Mohamat Kasim, Nazirah Radzali, Rosfariza Ismail, Ahmad Puad Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
author_facet	Mohamat Kasim, Nazirah Radzali, Rosfariza Ismail, Ahmad Puad
author_sort	Mohamat Kasim, Nazirah
title	Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_short	Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_full	Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_fullStr	Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_full_unstemmed	Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_sort	fabrication and characterization of 0.24 micron cmos device by using simulation / nazirah mohamat kasim, rosfariza radzali and ahmad puad ismail
publisher	Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA)
publishDate	2010
url	http://ir.uitm.edu.my/id/eprint/16338/ http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf
first_indexed	2023-09-18T22:55:50Z
last_indexed	2023-09-18T22:55:50Z
_version_	1777417847722475520

Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail

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