Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail

In this thesis, a composite between poly (methyl methacrylate) (PMMA) with titanium dioxide (Ti02) films were synthesized, fabricated and characterized using sol-gel spin coating technique. The dielectric, electrical and physical properties of PMMA:Ti02 nanocomposite films was were investigated, to...

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Main Author: Ismail, Lyly Nyl
Format: Thesis
Language:English
Published: 2015
Subjects:
Online Access:http://ir.uitm.edu.my/id/eprint/15359/
http://ir.uitm.edu.my/id/eprint/15359/1/TP_LYLY%20NYL%20ISMAIL%20EE%2015_5.pdf
id uitm-15359
recordtype eprints
spelling uitm-153592016-11-16T06:30:35Z http://ir.uitm.edu.my/id/eprint/15359/ Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail Ismail, Lyly Nyl Production of electricity by direct energy conversion In this thesis, a composite between poly (methyl methacrylate) (PMMA) with titanium dioxide (Ti02) films were synthesized, fabricated and characterized using sol-gel spin coating technique. The dielectric, electrical and physical properties of PMMA:Ti02 nanocomposite films was were investigated, to be used as the dielectric layer in the metal-insulator-semiconductor (MIS) device and organic field effect transistors (OFET) application. The goal of this study is to enhance the dielectric properties of PMMA with the influence of TiC^nanopowder (high-A;) material in the PMMA. Another goal is to overcome the leakage current (tunnelling current) and high operating voltage in MIS and OFET devices. PMMA:TiC>2 nanocomposite dielectric films deposition parameter were optimized resulting in good dielectric, electrical and physical properties. Results from the parameter optimization showed that the dielectric properties of PMMA:Ti02 nanocomposite film, which is focusing on the real permittivity, e\ imaginary permittivity, 6" and capacitance were improved. The real permittivity, e' of PMMA:Ti02 nanocomposite film was 12 and 10 measured at 1 kHz and 1MHz, respectively. These values are higher than pure PMMA film which was 4.6 and 2.9, respectively measured at the same frequency. The capacitance value for PMMA:Ti02 nanocomposite film increased drastically from 296 pF/cm2 (for pure PMMA) to 457 9 o nF/cm . The leakage current density for PMMA:Ti02 nanocomposite film was ~ 10" A/cm2 under small electric field of 0.25 MV/cm is due to the addition of Ti02 nanoparticles. Metal-insulator-semiconductor (MIS) structure was used to investigate the compatibility of PMMA:TiC>2 nanocomposite film to be used as dielectric layer with ZnO and P3HT semiconductor layers. The capacitance-voltage (C-V) characteristics indicated that density of interface of trapped charge was found to be 9 x 109 eV_1cm'2. In addition, the MIS exhibited leakage current of 10"6 A/cm2 at IV and relatively high breakdown voltage (2.05MV/cm). Small hysteresis was observed in C-V and I-V characteristics which were associated with ion drift and polarisation of the PMMA:Ti02 nanocomposite dielectric film. Finally, OFET devices with PMMA:TiC>2 nanocomposite as gate dielectric were demonstrated. The OFET performance proved that PMMA:Ti02 nanocomposite dielectric films were compatible with organic and inorganic semiconductors. Low threshold voltage, VTH was obtained for n-type and p-type OFET was around 2 V and -3 V respectively, due to the increment in the e' and capacitance value of the PMMA:Ti02 nanocomposite dielectric film. The fabricated OFET using PMMA:Ti02 as dielectric layer showed almost comparable characteristics reported by other researcher. 2015 Thesis NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/15359/1/TP_LYLY%20NYL%20ISMAIL%20EE%2015_5.pdf Ismail, Lyly Nyl (2015) Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail. PhD thesis, Universiti Teknologi MARA.
repository_type Digital Repository
institution_category Local University
institution Universiti Teknologi MARA
building UiTM Institutional Repository
collection Online Access
language English
topic Production of electricity by direct energy conversion
spellingShingle Production of electricity by direct energy conversion
Ismail, Lyly Nyl
Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
description In this thesis, a composite between poly (methyl methacrylate) (PMMA) with titanium dioxide (Ti02) films were synthesized, fabricated and characterized using sol-gel spin coating technique. The dielectric, electrical and physical properties of PMMA:Ti02 nanocomposite films was were investigated, to be used as the dielectric layer in the metal-insulator-semiconductor (MIS) device and organic field effect transistors (OFET) application. The goal of this study is to enhance the dielectric properties of PMMA with the influence of TiC^nanopowder (high-A;) material in the PMMA. Another goal is to overcome the leakage current (tunnelling current) and high operating voltage in MIS and OFET devices. PMMA:TiC>2 nanocomposite dielectric films deposition parameter were optimized resulting in good dielectric, electrical and physical properties. Results from the parameter optimization showed that the dielectric properties of PMMA:Ti02 nanocomposite film, which is focusing on the real permittivity, e\ imaginary permittivity, 6" and capacitance were improved. The real permittivity, e' of PMMA:Ti02 nanocomposite film was 12 and 10 measured at 1 kHz and 1MHz, respectively. These values are higher than pure PMMA film which was 4.6 and 2.9, respectively measured at the same frequency. The capacitance value for PMMA:Ti02 nanocomposite film increased drastically from 296 pF/cm2 (for pure PMMA) to 457 9 o nF/cm . The leakage current density for PMMA:Ti02 nanocomposite film was ~ 10" A/cm2 under small electric field of 0.25 MV/cm is due to the addition of Ti02 nanoparticles. Metal-insulator-semiconductor (MIS) structure was used to investigate the compatibility of PMMA:TiC>2 nanocomposite film to be used as dielectric layer with ZnO and P3HT semiconductor layers. The capacitance-voltage (C-V) characteristics indicated that density of interface of trapped charge was found to be 9 x 109 eV_1cm'2. In addition, the MIS exhibited leakage current of 10"6 A/cm2 at IV and relatively high breakdown voltage (2.05MV/cm). Small hysteresis was observed in C-V and I-V characteristics which were associated with ion drift and polarisation of the PMMA:Ti02 nanocomposite dielectric film. Finally, OFET devices with PMMA:TiC>2 nanocomposite as gate dielectric were demonstrated. The OFET performance proved that PMMA:Ti02 nanocomposite dielectric films were compatible with organic and inorganic semiconductors. Low threshold voltage, VTH was obtained for n-type and p-type OFET was around 2 V and -3 V respectively, due to the increment in the e' and capacitance value of the PMMA:Ti02 nanocomposite dielectric film. The fabricated OFET using PMMA:Ti02 as dielectric layer showed almost comparable characteristics reported by other researcher.
format Thesis
author Ismail, Lyly Nyl
author_facet Ismail, Lyly Nyl
author_sort Ismail, Lyly Nyl
title Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
title_short Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
title_full Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
title_fullStr Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
title_full_unstemmed Enhancement of dielectric properties of PMMA:TiO2 nanocomposite for organic field effect transistors / Lyly Nyl Ismail
title_sort enhancement of dielectric properties of pmma:tio2 nanocomposite for organic field effect transistors / lyly nyl ismail
publishDate 2015
url http://ir.uitm.edu.my/id/eprint/15359/
http://ir.uitm.edu.my/id/eprint/15359/1/TP_LYLY%20NYL%20ISMAIL%20EE%2015_5.pdf
first_indexed 2023-09-18T22:53:40Z
last_indexed 2023-09-18T22:53:40Z
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