Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature

Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature

Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A...

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Main Authors: Sutjipto, Agus Geter Edy, , Afzeri, Shafie, Amir Akramin
Format: Article
Language:English
Published: Trans Tech Publications Ltd., Switzerland 2011
Subjects:
TA401 Materials of engineering and construction
Online Access:http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf
id iium-8577
recordtype eprints
spelling iium-85772011-12-09T07:14:28Z http://irep.iium.edu.my/8577/ Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature Sutjipto, Agus Geter Edy , Afzeri Shafie, Amir Akramin TA401 Materials of engineering and construction Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity. Trans Tech Publications Ltd., Switzerland 2011-08-08 Article PeerReviewed application/pdf en http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf Sutjipto, Agus Geter Edy and , Afzeri and Shafie, Amir Akramin (2011) Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature. Applied Mechanics and Materials, 84-85. pp. 317-320. ISSN 1660-9336 http://www.scientific.net/AMM.84-85.317 10.4028/www.scientific.net/AMM.84-85.317
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic TA401 Materials of engineering and construction
spellingShingle TA401 Materials of engineering and construction
Sutjipto, Agus Geter Edy
, Afzeri
Shafie, Amir Akramin
Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
description Field-induced oxidation has become a promising process that is capable of directly producing high-resolution surface oxide patterns on variety materials. This report initiated the idea of the possibility of a controlled nanofabrication of SiO2 on silicon wafer by utilizing a frozen humid air film. A low temperature (-70oC) operation of an atomic force microscope (AFM) was used to condense ambient humidity (40%) to perform a thin frozen water layer covering a silicon wafer surface. A scanning probe was contacted with the layer and a zero bias voltage was applied to the sample surface with the AFM probe tip connected to the reference -2.44V. The frozen water film acted both as an electrolyte to form silicon dioxide and as a resource of hydroxide. Using this technique (a) a consistency in height of 6 nm silicon dioxide patterns layer could be achieved showing that the effect of tip vibration could be reduced; (b) easy to remove frozen water by just operating the AFM to the ambient temperature; (c) it is possible to control thickness by making different humidity.
format Article
author Sutjipto, Agus Geter Edy
, Afzeri
Shafie, Amir Akramin
author_facet Sutjipto, Agus Geter Edy
, Afzeri
Shafie, Amir Akramin
author_sort Sutjipto, Agus Geter Edy
title Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
title_short Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
title_full Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
title_fullStr Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
title_full_unstemmed Recent nanofabrication of silicon dioxide on silicon wafer using AFM operated at low temperature
title_sort recent nanofabrication of silicon dioxide on silicon wafer using afm operated at low temperature
publisher Trans Tech Publications Ltd., Switzerland
publishDate 2011
url http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/
http://irep.iium.edu.my/8577/1/AGUS_-_Applied_Mechanics_and_Materials_2011_-_Nanofabrication.pdf
first_indexed 2023-09-18T20:18:19Z
last_indexed 2023-09-18T20:18:19Z
_version_ 1777407937093828608

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