Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English English |
| Published: |
Vlokh Institute of Physical Optics,
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf |