Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes

We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse...

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Main Authors:	Hedzir, Anati Syahirah, Muridan, Norasmahan, Yusof, Abdullah, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English English
Published:	Vlokh Institute of Physical Optics, 2019
Subjects:	QC Physics TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf

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spelling	iium-754002019-11-21T09:43:26Z http://irep.iium.edu.my/75400/ Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes Hedzir, Anati Syahirah Muridan, Norasmahan Yusof, Abdullah Hasbullah, Nurul Fadzlin QC Physics TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse-leakage current increases twice under the fluence 9.90×1016 electrons/cm2. This suggests the existence of radiation damage-induced traps. The irradiation reduces the capacitance and the carrier concentration, which can be attributed to deactivation of dopant atoms. Basing on electroluminescence measurements, we prove that the luminescence intensity and the red shift of peak position increase significantly with increasing dose. The peak-wavelength shift can be attributed primarily to the radiation-induced defects that cause formation of red bands and, at the same time, gradually suppress the band-edge luminescence. Vlokh Institute of Physical Optics, 2019-09 Article PeerReviewed application/pdf en http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf application/pdf en http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf application/pdf en http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf Hedzir, Anati Syahirah and Muridan, Norasmahan and Yusof, Abdullah and Hasbullah, Nurul Fadzlin (2019) Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes. Ukrainian Journal of Physical Optics, 20 (3). pp. 124-132. ISSN 1609-1833 E-ISSN 1816-2002 http://ifo.lviv.ua/journal/UJPO_PDF/2019_3/0503_2019.pdf 10.3116/16091833/20/3/124/2019
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	QC Physics TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	QC Physics TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Hedzir, Anati Syahirah Muridan, Norasmahan Yusof, Abdullah Hasbullah, Nurul Fadzlin Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
description	We study the effect of electron irradiation on the electrical and optical characteristics of commercial gallium-nitride light emitting diodes in the fluence region from 1015 to 1017 electrons/cm2. After electron irradiation, the forward leakage current shows no significant changes, while the reverse-leakage current increases twice under the fluence 9.90×1016 electrons/cm2. This suggests the existence of radiation damage-induced traps. The irradiation reduces the capacitance and the carrier concentration, which can be attributed to deactivation of dopant atoms. Basing on electroluminescence measurements, we prove that the luminescence intensity and the red shift of peak position increase significantly with increasing dose. The peak-wavelength shift can be attributed primarily to the radiation-induced defects that cause formation of red bands and, at the same time, gradually suppress the band-edge luminescence.
format	Article
author	Hedzir, Anati Syahirah Muridan, Norasmahan Yusof, Abdullah Hasbullah, Nurul Fadzlin
author_facet	Hedzir, Anati Syahirah Muridan, Norasmahan Yusof, Abdullah Hasbullah, Nurul Fadzlin
author_sort	Hedzir, Anati Syahirah
title	Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
title_short	Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
title_full	Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
title_fullStr	Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
title_full_unstemmed	Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
title_sort	effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes
publisher	Vlokh Institute of Physical Optics,
publishDate	2019
url	http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/ http://irep.iium.edu.my/75400/1/75400_Effect%20of%20electron%20irradiation.pdf http://irep.iium.edu.my/75400/2/75400_Effect%20of%20electron%20irradiation_WOS.pdf http://irep.iium.edu.my/75400/13/75400_Effect%20of%20electron%20irradiation%20on%20the%20electrical%20and%20optical%20characteristics%20of%20gallium-nitride%20light%20emitting%20diodes_Scopus.pdf
first_indexed	2023-09-18T21:46:41Z
last_indexed	2023-09-18T21:46:41Z
_version_	1777413496733958144

Effect of electron irradiation on the electrical and optical characteristics of gallium-nitride light emitting diodes

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