Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...

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Main Authors: Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Che Hak, Cik Rohaida
Format: Conference or Workshop Item
Language:English
English
English
Published: American Institute of Physics Inc. 2019
Subjects:
Online Access:http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf
http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf
http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf
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recordtype eprints
spelling iium-725732019-06-13T01:05:32Z http://irep.iium.edu.my/72573/ Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device. American Institute of Physics Inc. 2019 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf application/pdf en http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan. https://aip.scitation.org/doi/abs/10.1063/1.5089313?journalCode=apc 10.1063/1.5089313
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
English
topic TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Abdullah, Yusof
Hedzir, Anati Syahirah
Hasbullah, Nurul Fadzlin
Che Hak, Cik Rohaida
Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
description Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device.
format Conference or Workshop Item
author Abdullah, Yusof
Hedzir, Anati Syahirah
Hasbullah, Nurul Fadzlin
Che Hak, Cik Rohaida
author_facet Abdullah, Yusof
Hedzir, Anati Syahirah
Hasbullah, Nurul Fadzlin
Che Hak, Cik Rohaida
author_sort Abdullah, Yusof
title Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_short Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_full Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_fullStr Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_full_unstemmed Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_sort study on capacitance performance of gallium nitride (gan) diodes in high dose electron irradiation
publisher American Institute of Physics Inc.
publishDate 2019
url http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/
http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf
http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf
http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf
first_indexed 2023-09-18T21:42:50Z
last_indexed 2023-09-18T21:42:50Z
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