Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...

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Main Authors:	Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Che Hak, Cik Rohaida
Format:	Conference or Workshop Item
Language:	English English English
Published:	American Institute of Physics Inc. 2019
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf

id	iium-72573
recordtype	eprints
spelling	iium-725732019-06-13T01:05:32Z http://irep.iium.edu.my/72573/ Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device. American Institute of Physics Inc. 2019 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf application/pdf en http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Che Hak, Cik Rohaida (2019) Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation. In: International Conference on X-Rays and Related Techniques in Research and Industry 2018 (ICXRI 2018), 18th-19th August 2018, Kota Baharu, Kelantan. https://aip.scitation.org/doi/abs/10.1063/1.5089313?journalCode=apc 10.1063/1.5089313
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
description	Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measured. The result showed that the amount of capacitance and doping concentration decreases as the radiation dose increased. The deactivation of dopants atoms in the bulk increased due to higher irradiation dose hence increasing the radiation-induced defect which lead to the degradation of the device.
format	Conference or Workshop Item
author	Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida
author_facet	Abdullah, Yusof Hedzir, Anati Syahirah Hasbullah, Nurul Fadzlin Che Hak, Cik Rohaida
author_sort	Abdullah, Yusof
title	Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_short	Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_full	Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_fullStr	Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_full_unstemmed	Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation
title_sort	study on capacitance performance of gallium nitride (gan) diodes in high dose electron irradiation
publisher	American Institute of Physics Inc.
publishDate	2019
url	http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/ http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf
first_indexed	2023-09-18T21:42:50Z
last_indexed	2023-09-18T21:42:50Z
_version_	1777413254107103232

Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

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