Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons

A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage character...

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Main Authors:	Mohd Khairi, Mohamad Azim, Abdullah, Yusof, Ab Rahim, Rosminazuin, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	The Institution of Engineering and Technology (IET) 2019
Subjects:	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72561/ http://irep.iium.edu.my/72561/ http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf

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recordtype	eprints
spelling	iium-725612019-06-13T01:02:47Z http://irep.iium.edu.my/72561/ Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons Mohd Khairi, Mohamad Azim Abdullah, Yusof Ab Rahim, Rosminazuin Hasbullah, Nurul Fadzlin T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage characterization were used to investigate the impact of the irradiation on ideality factor, saturation current, series resistance, and barrier height. The results show that the forward current decreased with increasing irradiation, while the reverse current increased except for the diodes irradiated with 4.95×1016 electron/cm2 . The ideality factors increased more significantly at the highest fluence compared to the other fluences i.e. from 1.026 (ROHM) and 1.01 (CREE) at before irradiation to 1.2 (ROHM) and 1.8 (CREE) at 4.95×1016 electron/cm2 . The saturation currents increased until the fluence of 1.6×1016 electron/cm2 , then decreased after 3.3×1016 electron/cm2 which lead to the opposing behaviour observed in barrier height. Subsequently, the series resistances showed a significant rise for both models and are interpreted as being due to the changes in the free carriers’ concentration during irradiation. The capacitance of both models was reduced after irradiation, proving that the free carriers’ concentration has been decreased with increasing fluence due to the trapping effect of the defects. The Institution of Engineering and Technology (IET) 2019 Article PeerReviewed application/pdf en http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf application/pdf en http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf Mohd Khairi, Mohamad Azim and Abdullah, Yusof and Ab Rahim, Rosminazuin and Hasbullah, Nurul Fadzlin (2019) Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons. IET Circuits, Devices & Systems, xx (xx). pp. 1-7. ISSN 1751-858X E-ISSN 1751-8598 (Unpublished) https://digital-library.theiet.org/content/journals/iet-cds
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Mohd Khairi, Mohamad Azim Abdullah, Yusof Ab Rahim, Rosminazuin Hasbullah, Nurul Fadzlin Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
description	A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage characterization were used to investigate the impact of the irradiation on ideality factor, saturation current, series resistance, and barrier height. The results show that the forward current decreased with increasing irradiation, while the reverse current increased except for the diodes irradiated with 4.95×1016 electron/cm2 . The ideality factors increased more significantly at the highest fluence compared to the other fluences i.e. from 1.026 (ROHM) and 1.01 (CREE) at before irradiation to 1.2 (ROHM) and 1.8 (CREE) at 4.95×1016 electron/cm2 . The saturation currents increased until the fluence of 1.6×1016 electron/cm2 , then decreased after 3.3×1016 electron/cm2 which lead to the opposing behaviour observed in barrier height. Subsequently, the series resistances showed a significant rise for both models and are interpreted as being due to the changes in the free carriers’ concentration during irradiation. The capacitance of both models was reduced after irradiation, proving that the free carriers’ concentration has been decreased with increasing fluence due to the trapping effect of the defects.
format	Article
author	Mohd Khairi, Mohamad Azim Abdullah, Yusof Ab Rahim, Rosminazuin Hasbullah, Nurul Fadzlin
author_facet	Mohd Khairi, Mohamad Azim Abdullah, Yusof Ab Rahim, Rosminazuin Hasbullah, Nurul Fadzlin
author_sort	Mohd Khairi, Mohamad Azim
title	Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_short	Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_full	Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_fullStr	Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_full_unstemmed	Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons
title_sort	durability of 4h-sic schottky power diodes irradiated with high-energy bombarding electrons
publisher	The Institution of Engineering and Technology (IET)
publishDate	2019
url	http://irep.iium.edu.my/72561/ http://irep.iium.edu.my/72561/ http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf
first_indexed	2023-09-18T21:42:48Z
last_indexed	2023-09-18T21:42:48Z
_version_	1777413252639096832

Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons

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