Single event transient effects on 3T and 4T CMOS active pixel sensors for different technologies
The widely used CMOS Active Pixel Sensors (APS) in space imaging mission are vulnerable to radiations known as Single Event Transient (SET). This paper focus on 3T and 4T CMOS APS with technology from 130 nm scaling down to 32 nm, simulated using various Linear Energy Transfer (LET) magnitudes rangi...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English English |
| Published: |
Taylor & Francis Group
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/ http://irep.iium.edu.my/72558/1/Single%20event%20transient%20effects%20on%203T%20and%204T%20CMOS%20active%20pixel%20sensors%20for%20different%20technologies.pdf http://irep.iium.edu.my/72558/7/72558_Single%20event%20transient%20effects_scopus.pdf |
Internet
http://irep.iium.edu.my/72558/http://irep.iium.edu.my/72558/
http://irep.iium.edu.my/72558/
http://irep.iium.edu.my/72558/1/Single%20event%20transient%20effects%20on%203T%20and%204T%20CMOS%20active%20pixel%20sensors%20for%20different%20technologies.pdf
http://irep.iium.edu.my/72558/7/72558_Single%20event%20transient%20effects_scopus.pdf