Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition

Polycrystalline metal substrates such as copper (Cu) have been intensively used to grow graphene in chemical vapor deposition (CVD) technique. It has been observed that crystal orientations affect the quality of graphene produced to some degree. The existence of crystal orientations caused graphene...

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Main Authors:	Sirat, Mohd Shukri, Ismail, Edhuan, Ramlan, Amir Hakimi, Fauzi, Fatin Bazilah, Yaacob, Iskandar Idris, Mohamed, Mohd Ambri, Mohd Abid, Mohd Asyadi Azam, Ani, Mohd Hanafi
Format:	Conference or Workshop Item
Language:	English English
Published:	Elsevier Ltd. 2019
Subjects:	T Technology (General) TJ Mechanical engineering and machinery
Online Access:	http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/1/71184_Influence%20of%20surface%20energy%20and%20elastic.pdf http://irep.iium.edu.my/71184/7/71184_Influence%20of%20surface%20energy%20and%20elastic%20strain%20energy%20on%20the%20graphene%20growth%20in%20chemical%20vapor%20deposition_Scopus.pdf

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recordtype	eprints
spelling	iium-711842019-11-26T04:30:50Z http://irep.iium.edu.my/71184/ Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition Sirat, Mohd Shukri Ismail, Edhuan Ramlan, Amir Hakimi Fauzi, Fatin Bazilah Yaacob, Iskandar Idris Mohamed, Mohd Ambri Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi T Technology (General) TJ Mechanical engineering and machinery Polycrystalline metal substrates such as copper (Cu) have been intensively used to grow graphene in chemical vapor deposition (CVD) technique. It has been observed that crystal orientations affect the quality of graphene produced to some degree. The existence of crystal orientations caused graphene to grow randomly on top of Cu which also resulted on the formation of polycrystalline graphene. Despite this, the influence of crystal orientations on the quality of graphene produced are not yet fully understood. There are two possible factors that could affect graphene growth from crystal orientation point of view; surface energy and elastic strain energy. The understanding towards these both factors might beneficial to control the quality of graphene. This paper thus aims to highlight the influence of surface energy and elastic strain energy on the graphene growth in CVD. Substrate used were single crystal Cu with (111), (110) and (100) orientations. The graphene was grown inside a closed reaction chamber with the presence of argon (Ar), hydrogen (H2) and methane (CH4) gases with partial pressure ratio of 0.6: 0.2: 0.2 at 1 atm, 1000 ˚C in 30 minutes. The quality of the as-grown graphene was identified using Raman spectroscopy. The Raman spectra show the existence of graphene peak for all the Cu substrates. The calculation of ID/IG ratio revealed that the Cu (100) possessed the lowest amount of defects compared to Cu(110) and Cu(111). While I2D/IG ratio fluctuated between 0.22 to 0.34 suggested that the crystal orientation does not control the thickness of graphene layer at these reaction conditions. The usage of higher CH4 partial pressure produced a thicker graphene. It is assumed that the thickness of the graphene exceeded the critical thickness thus elastic strain energy becomes the dominant factor in controlling graphene growth. Larger lattice mismatch causes major defects on graphene and this result has been shown in graphene grown on top of Cu(111). These findings thus would give a new insight to tailor the high-quality large-area graphene growth in CVD. Elsevier Ltd. 2019 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/71184/1/71184_Influence%20of%20surface%20energy%20and%20elastic.pdf application/pdf en http://irep.iium.edu.my/71184/7/71184_Influence%20of%20surface%20energy%20and%20elastic%20strain%20energy%20on%20the%20graphene%20growth%20in%20chemical%20vapor%20deposition_Scopus.pdf Sirat, Mohd Shukri and Ismail, Edhuan and Ramlan, Amir Hakimi and Fauzi, Fatin Bazilah and Yaacob, Iskandar Idris and Mohamed, Mohd Ambri and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2019) Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur. https://www.sciencedirect.com/science/article/pii/S2214785318330025 https://doi.org/10.1016/j.matpr.2018.12.074
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General) TJ Mechanical engineering and machinery
spellingShingle	T Technology (General) TJ Mechanical engineering and machinery Sirat, Mohd Shukri Ismail, Edhuan Ramlan, Amir Hakimi Fauzi, Fatin Bazilah Yaacob, Iskandar Idris Mohamed, Mohd Ambri Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
description	Polycrystalline metal substrates such as copper (Cu) have been intensively used to grow graphene in chemical vapor deposition (CVD) technique. It has been observed that crystal orientations affect the quality of graphene produced to some degree. The existence of crystal orientations caused graphene to grow randomly on top of Cu which also resulted on the formation of polycrystalline graphene. Despite this, the influence of crystal orientations on the quality of graphene produced are not yet fully understood. There are two possible factors that could affect graphene growth from crystal orientation point of view; surface energy and elastic strain energy. The understanding towards these both factors might beneficial to control the quality of graphene. This paper thus aims to highlight the influence of surface energy and elastic strain energy on the graphene growth in CVD. Substrate used were single crystal Cu with (111), (110) and (100) orientations. The graphene was grown inside a closed reaction chamber with the presence of argon (Ar), hydrogen (H2) and methane (CH4) gases with partial pressure ratio of 0.6: 0.2: 0.2 at 1 atm, 1000 ˚C in 30 minutes. The quality of the as-grown graphene was identified using Raman spectroscopy. The Raman spectra show the existence of graphene peak for all the Cu substrates. The calculation of ID/IG ratio revealed that the Cu (100) possessed the lowest amount of defects compared to Cu(110) and Cu(111). While I2D/IG ratio fluctuated between 0.22 to 0.34 suggested that the crystal orientation does not control the thickness of graphene layer at these reaction conditions. The usage of higher CH4 partial pressure produced a thicker graphene. It is assumed that the thickness of the graphene exceeded the critical thickness thus elastic strain energy becomes the dominant factor in controlling graphene growth. Larger lattice mismatch causes major defects on graphene and this result has been shown in graphene grown on top of Cu(111). These findings thus would give a new insight to tailor the high-quality large-area graphene growth in CVD.
format	Conference or Workshop Item
author	Sirat, Mohd Shukri Ismail, Edhuan Ramlan, Amir Hakimi Fauzi, Fatin Bazilah Yaacob, Iskandar Idris Mohamed, Mohd Ambri Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi
author_facet	Sirat, Mohd Shukri Ismail, Edhuan Ramlan, Amir Hakimi Fauzi, Fatin Bazilah Yaacob, Iskandar Idris Mohamed, Mohd Ambri Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi
author_sort	Sirat, Mohd Shukri
title	Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
title_short	Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
title_full	Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
title_fullStr	Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
title_full_unstemmed	Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
title_sort	influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition
publisher	Elsevier Ltd.
publishDate	2019
url	http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/ http://irep.iium.edu.my/71184/1/71184_Influence%20of%20surface%20energy%20and%20elastic.pdf http://irep.iium.edu.my/71184/7/71184_Influence%20of%20surface%20energy%20and%20elastic%20strain%20energy%20on%20the%20graphene%20growth%20in%20chemical%20vapor%20deposition_Scopus.pdf
first_indexed	2023-09-18T21:41:03Z
last_indexed	2023-09-18T21:41:03Z
_version_	1777413141919956992

Influence of surface energy and elastic strain energy on the graphene growth in chemical vapor deposition

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