Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition

Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the qualit...

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Main Authors:	Ramlan, Amir Hakimi, Sirat, Mohd Shukri, Ismail, Edhuan, Buys, Yose Fachmi, Purwanto, Hadi, Mohd Mustafah, Yasir, Md Din, Muhammad Faiz, Ani, Mohd Hanafi
Format:	Conference or Workshop Item
Language:	English English
Published:	Science Direct 2019
Subjects:	T Technology (General)
Online Access:	http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf

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recordtype	eprints
spelling	iium-711822019-11-26T04:06:25Z http://irep.iium.edu.my/71182/ Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition Ramlan, Amir Hakimi Sirat, Mohd Shukri Ismail, Edhuan Buys, Yose Fachmi Purwanto, Hadi Mohd Mustafah, Yasir Md Din, Muhammad Faiz Ani, Mohd Hanafi T Technology (General) Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the quality of graphene on copper and palladium substrates as a function of various hydrogen concentrations during annealing as well as different annealing times is studied. Copper and palladium substrates are chosen due to their difference in carbon/hydrogen diffusivity and solubility. Raman analysis showed that upon annealing under higher hydrogen concentration, the graphene grown is defective and with multiple layers. On the other hand, prolonged annealing time is detrimental to the quality of both substrates. Empirical-based calculations showed that both substrates experienced an increase in graphene layers as both H2 concentration and annealing time were increased. We postulate that the presence of defects and multilayer graphene are caused by the hydrogen trapping phenomenon inside the substrates’ vacancies and also the activation of potential defects’ sites through hydrogen adsorption. Graphical representations of the relationship between hydrogen concentration and annealing time towards graphene quality were plotted to suggest the optimized parameters in producing pristine graphene. Science Direct 2019 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf application/pdf en http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf Ramlan, Amir Hakimi and Sirat, Mohd Shukri and Ismail, Edhuan and Buys, Yose Fachmi and Purwanto, Hadi and Mohd Mustafah, Yasir and Md Din, Muhammad Faiz and Ani, Mohd Hanafi (2019) Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition. In: Nanotech Malaysia 2018 in conjunction with 3rd International Conference on Enabling Science and Nanotechnology (ESciNano 2018), 5th Malaysia Workshop on 2D Materials and Carbon Nanotube (2DMC 2018), 7th-9th May 2018, Kuala Lumpur. https://www.sciencedirect.com/science/article/pii/S2214785318329869 https://doi.org/10.1016/j.matpr.2018.12.060
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	T Technology (General)
spellingShingle	T Technology (General) Ramlan, Amir Hakimi Sirat, Mohd Shukri Ismail, Edhuan Buys, Yose Fachmi Purwanto, Hadi Mohd Mustafah, Yasir Md Din, Muhammad Faiz Ani, Mohd Hanafi Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
description	Since the discovery of graphene, chemical vapor deposition (CVD) is by far the best method to produce the material. However, optimization of the process’ parameters is not yet completed. One of the most debatable issues in CVD is the effects of hydrogen towards graphene. In this research, the quality of graphene on copper and palladium substrates as a function of various hydrogen concentrations during annealing as well as different annealing times is studied. Copper and palladium substrates are chosen due to their difference in carbon/hydrogen diffusivity and solubility. Raman analysis showed that upon annealing under higher hydrogen concentration, the graphene grown is defective and with multiple layers. On the other hand, prolonged annealing time is detrimental to the quality of both substrates. Empirical-based calculations showed that both substrates experienced an increase in graphene layers as both H2 concentration and annealing time were increased. We postulate that the presence of defects and multilayer graphene are caused by the hydrogen trapping phenomenon inside the substrates’ vacancies and also the activation of potential defects’ sites through hydrogen adsorption. Graphical representations of the relationship between hydrogen concentration and annealing time towards graphene quality were plotted to suggest the optimized parameters in producing pristine graphene.
format	Conference or Workshop Item
author	Ramlan, Amir Hakimi Sirat, Mohd Shukri Ismail, Edhuan Buys, Yose Fachmi Purwanto, Hadi Mohd Mustafah, Yasir Md Din, Muhammad Faiz Ani, Mohd Hanafi
author_facet	Ramlan, Amir Hakimi Sirat, Mohd Shukri Ismail, Edhuan Buys, Yose Fachmi Purwanto, Hadi Mohd Mustafah, Yasir Md Din, Muhammad Faiz Ani, Mohd Hanafi
author_sort	Ramlan, Amir Hakimi
title	Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_short	Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_full	Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_fullStr	Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_full_unstemmed	Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
title_sort	effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition
publisher	Science Direct
publishDate	2019
url	http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/ http://irep.iium.edu.my/71182/1/71182_Effects%20of%20hydrogen%20during%20annealing.pdf http://irep.iium.edu.my/71182/7/71182_Effects%20of%20hydrogen%20during%20annealing%20process%20of%20graphene%20synthesis%20via%20chemical%20vapor%20deposition_Scopus.pdf
first_indexed	2023-09-18T21:41:02Z
last_indexed	2023-09-18T21:41:02Z
_version_	1777413141624258560

Effects of hydrogen during annealing process of graphene synthesis via chemical vapor deposition

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