Material characterization of a doped triangular silicon nanowire using raman spectroscopy

Material characterization of a doped triangular silicon nanowire using raman spectroscopy

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxi...

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Main Authors: Za'bah, Nor Farahidah, Md Ralib @ Md Raghib, Aliza 'Aini, Kwa, Kelvin S. K., O'Neill, Anthony
Format: Article
Language:English
English
Published: American Scientific Publishers 2018
Subjects:
TA213 Engineering machinery, tools, and implements
Online Access:http://irep.iium.edu.my/71148/
http://irep.iium.edu.my/71148/
http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf
http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf
id iium-71148
recordtype eprints
spelling iium-711482019-07-12T07:13:43Z http://irep.iium.edu.my/71148/ Material characterization of a doped triangular silicon nanowire using raman spectroscopy Za'bah, Nor Farahidah Md Ralib @ Md Raghib, Aliza 'Aini Kwa, Kelvin S. K. O'Neill, Anthony TA213 Engineering machinery, tools, and implements A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) is known to create geometrical structures due to its anisotropic mechanism of etching. The SOI is doped with an n-type dopant (phosphorus) and the doped silicon nanowire is then characterized using Raman Spectroscopy. Due to the changes in the silicon structure, the result shows that the highly doped silicon nanowire has a wider Full Width Half Maximum (FWHM) as compared to the undoped silicon substrate. American Scientific Publishers 2018-11-01 Article PeerReviewed application/pdf en http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf application/pdf en http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf Za'bah, Nor Farahidah and Md Ralib @ Md Raghib, Aliza 'Aini and Kwa, Kelvin S. K. and O'Neill, Anthony (2018) Material characterization of a doped triangular silicon nanowire using raman spectroscopy. Advanced Science Letters, 24 (11). pp. 8962-8965. ISSN 1936-6612 E-ISSN 1936-7317 10.1166/asl.2018.12384
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
topic TA213 Engineering machinery, tools, and implements
spellingShingle TA213 Engineering machinery, tools, and implements
Za'bah, Nor Farahidah
Md Ralib @ Md Raghib, Aliza 'Aini
Kwa, Kelvin S. K.
O'Neill, Anthony
Material characterization of a doped triangular silicon nanowire using raman spectroscopy
description A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxide (TMAH) is known to create geometrical structures due to its anisotropic mechanism of etching. The SOI is doped with an n-type dopant (phosphorus) and the doped silicon nanowire is then characterized using Raman Spectroscopy. Due to the changes in the silicon structure, the result shows that the highly doped silicon nanowire has a wider Full Width Half Maximum (FWHM) as compared to the undoped silicon substrate.
format Article
author Za'bah, Nor Farahidah
Md Ralib @ Md Raghib, Aliza 'Aini
Kwa, Kelvin S. K.
O'Neill, Anthony
author_facet Za'bah, Nor Farahidah
Md Ralib @ Md Raghib, Aliza 'Aini
Kwa, Kelvin S. K.
O'Neill, Anthony
author_sort Za'bah, Nor Farahidah
title Material characterization of a doped triangular silicon nanowire using raman spectroscopy
title_short Material characterization of a doped triangular silicon nanowire using raman spectroscopy
title_full Material characterization of a doped triangular silicon nanowire using raman spectroscopy
title_fullStr Material characterization of a doped triangular silicon nanowire using raman spectroscopy
title_full_unstemmed Material characterization of a doped triangular silicon nanowire using raman spectroscopy
title_sort material characterization of a doped triangular silicon nanowire using raman spectroscopy
publisher American Scientific Publishers
publishDate 2018
url http://irep.iium.edu.my/71148/
http://irep.iium.edu.my/71148/
http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf
http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf
first_indexed 2023-09-18T21:41:00Z
last_indexed 2023-09-18T21:41:00Z
_version_ 1777413138717605888

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