Reliability study of silicon carbide Schottky Diode with fast electron irradiation

The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been...

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Main Authors:	Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Hasbullah, Nurul Fadzlin, Abdullah, Yusof
Format:	Conference or Workshop Item
Language:	English English
Published:	Institute of Electrical and Electronics Engineers Inc. 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf

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spelling	iium-707912019-07-03T07:17:38Z http://irep.iium.edu.my/70791/ Reliability study of silicon carbide Schottky Diode with fast electron irradiation Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof TK Electrical engineering. Electronics Nuclear engineering The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×103 Ω; STMICROELECTRONICS: 1.44 Ω to 2.1 × 109 Ω) due to the irradiation-induced defects. Besides that, the reverse leakage current density in INFINEON increased by one order of magnitude while reverse leakage current density in STMICROELECTRONICS decreased by about one order of magnitude. We have also observed an increase in ideality factor (INFINEON: 1.01 to 1.05; STMICROELECTRONICS: 1.02 to 1.3) and saturation current (INFINEON: 1.6×10-17 A to 2.5×10-17 A; STMICROELECTRONICS: 2.4×10-15 A to 8 × 10-15 A) as a result of electron irradiation. Overall, for particular devices studied, INFINEON have better quality devices and more radiation resistance compared to STMICROELECTRONICS. Institute of Electrical and Electronics Engineers Inc. 2018 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Hasbullah, Nurul Fadzlin and Abdullah, Yusof (2018) Reliability study of silicon carbide Schottky Diode with fast electron irradiation. In: 7th International Conference on Computer and Communication Engineering, ICCCE 2018, 19th-20th September 2018, Kuala Lumpur. https://ieeexplore.ieee.org/document/8539343 10.1109/ICCCE.2018.8539343
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof Reliability study of silicon carbide Schottky Diode with fast electron irradiation
description	The impact of fast electron exposure upon the performance of commercial silicon carbide Schottky diodes has been studied. Under 3 MeV electrons, absorbed dose of 10 and 15 MGy at room temperature, the forward current density-voltage characteristic of INFINEON and STMICROELECTRONICS devices have been decreased by 4.6 and 8.2 orders of magnitude respectively. The reduction is associated with the significant rise in the series resistance (INFINEON: 1.45 Ω to 121×103 Ω; STMICROELECTRONICS: 1.44 Ω to 2.1 × 109 Ω) due to the irradiation-induced defects. Besides that, the reverse leakage current density in INFINEON increased by one order of magnitude while reverse leakage current density in STMICROELECTRONICS decreased by about one order of magnitude. We have also observed an increase in ideality factor (INFINEON: 1.01 to 1.05; STMICROELECTRONICS: 1.02 to 1.3) and saturation current (INFINEON: 1.6×10-17 A to 2.5×10-17 A; STMICROELECTRONICS: 2.4×10-15 A to 8 × 10-15 A) as a result of electron irradiation. Overall, for particular devices studied, INFINEON have better quality devices and more radiation resistance compared to STMICROELECTRONICS.
format	Conference or Workshop Item
author	Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof
author_facet	Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Hasbullah, Nurul Fadzlin Abdullah, Yusof
author_sort	Mohd Khairi, Mohamad Azim
title	Reliability study of silicon carbide Schottky Diode with fast electron irradiation
title_short	Reliability study of silicon carbide Schottky Diode with fast electron irradiation
title_full	Reliability study of silicon carbide Schottky Diode with fast electron irradiation
title_fullStr	Reliability study of silicon carbide Schottky Diode with fast electron irradiation
title_full_unstemmed	Reliability study of silicon carbide Schottky Diode with fast electron irradiation
title_sort	reliability study of silicon carbide schottky diode with fast electron irradiation
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2018
url	http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/ http://irep.iium.edu.my/70791/1/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky%20Diode_SCOPUS.pdf http://irep.iium.edu.my/70791/2/70791_Reliability%20study%20of%20silicon%20carbide%20Schottky.pdf
first_indexed	2023-09-18T21:40:29Z
last_indexed	2023-09-18T21:40:29Z
_version_	1777413106513739776

Reliability study of silicon carbide Schottky Diode with fast electron irradiation

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