Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips
In this work, the thermoelectric properties of p- and n-type ¢-FeSi2, prepared utilizing cast iron scrap chips, have been characterized by measuring the Seebeck coefficient, electrical conductivity and thermal conductivity at temperatures ranging from room temperatures to 800°C. In a previous study,...
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The Japan Institute of Metals and Materials
2016
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iium-679602019-07-15T01:32:31Z http://irep.iium.edu.my/67960/ Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips Nor Hairin, Assayidatul Laila Nanko, Makoto Takeda, Masatoshi TA401 Materials of engineering and construction TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices In this work, the thermoelectric properties of p- and n-type ¢-FeSi2, prepared utilizing cast iron scrap chips, have been characterized by measuring the Seebeck coefficient, electrical conductivity and thermal conductivity at temperatures ranging from room temperatures to 800°C. In a previous study, the upgrade recycling of cast iron scrap chips into ¢-FeSi2 thermoelectric materials was proposed as an eco-friendly and costeffective production process. By doping with different substitution concentrations of Co, Mn and Al, the conduction type and properties of ¢FeSi2 can be modified and improved using cast iron scrap chips as a starting material. The effects of the doping elements are discussed for preparing ¢-FeSi2 utilizing cast iron scrap chips. Cast iron scrap chips could be preferable as a starting material to replace pure Fe for n- and ptype ¢-FeSi2 thermoelectric materials. An optimum composition for n-type ¢-FeSi2 0.94C.I.-0.06Co-1.86Si shows that the largest ZT value of 0.22 occurs at 700°C, whereas for p-type ¢-FeSi2 0.92C.I.-0.08Mn-1.86Si, the largest ZT value of 0.17 occurs at 800°C. The Japan Institute of Metals and Materials 2016-01-29 Article PeerReviewed application/pdf en http://irep.iium.edu.my/67960/1/67960_Effects%20of%20Doping%20Elements.pdf application/pdf en http://irep.iium.edu.my/67960/2/67960_Effects%20of%20Doping%20Elements_WOS.pdf Nor Hairin, Assayidatul Laila and Nanko, Makoto and Takeda, Masatoshi (2016) Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips. Materials Transactions, 57 (3). pp. 445-451. ISSN 1345-9678 E-ISSN 1347-5320 https://www.jstage.jst.go.jp/article/matertrans/57/3/57_M2015357/_article 10.2320/matertrans.M2015357 |
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TA401 Materials of engineering and construction TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
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TA401 Materials of engineering and construction TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Nor Hairin, Assayidatul Laila Nanko, Makoto Takeda, Masatoshi Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
description |
In this work, the thermoelectric properties of p- and n-type ¢-FeSi2, prepared utilizing cast iron scrap chips, have been characterized by measuring the Seebeck coefficient, electrical conductivity and thermal conductivity at temperatures ranging from room temperatures to 800°C. In a previous study, the upgrade recycling of cast iron scrap chips into ¢-FeSi2 thermoelectric materials was proposed as an eco-friendly and costeffective production process. By doping with different substitution concentrations of Co, Mn and Al, the conduction type and properties of ¢FeSi2 can be modified and improved using cast iron scrap chips as a starting material. The effects of the doping elements are discussed for preparing ¢-FeSi2 utilizing cast iron scrap chips. Cast iron scrap chips could be preferable as a starting material to replace pure Fe for n- and ptype ¢-FeSi2 thermoelectric materials. An optimum composition for n-type ¢-FeSi2 0.94C.I.-0.06Co-1.86Si shows that the largest ZT value of 0.22 occurs at 700°C, whereas for p-type ¢-FeSi2 0.92C.I.-0.08Mn-1.86Si, the largest ZT value of 0.17 occurs at 800°C. |
format |
Article |
author |
Nor Hairin, Assayidatul Laila Nanko, Makoto Takeda, Masatoshi |
author_facet |
Nor Hairin, Assayidatul Laila Nanko, Makoto Takeda, Masatoshi |
author_sort |
Nor Hairin, Assayidatul Laila |
title |
Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
title_short |
Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
title_full |
Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
title_fullStr |
Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
title_full_unstemmed |
Effects of doping elements in ¢-FeSi2 prepared utilizing cast iron scrap chips |
title_sort |
effects of doping elements in ¢-fesi2 prepared utilizing cast iron scrap chips |
publisher |
The Japan Institute of Metals and Materials |
publishDate |
2016 |
url |
http://irep.iium.edu.my/67960/ http://irep.iium.edu.my/67960/ http://irep.iium.edu.my/67960/ http://irep.iium.edu.my/67960/1/67960_Effects%20of%20Doping%20Elements.pdf http://irep.iium.edu.my/67960/2/67960_Effects%20of%20Doping%20Elements_WOS.pdf |
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2023-09-18T21:36:29Z |
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2023-09-18T21:36:29Z |
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