About the silicon sensitivity of the deep level with alternating pressure
This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation...
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IIUM Press, International Islamic University Malaysia
2018
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iium-677472019-01-27T07:40:31Z http://irep.iium.edu.my/67747/ About the silicon sensitivity of the deep level with alternating pressure Tursunov, Ikromjon Gulamovich Okhunov, Abdurahim Mamatkarimov, Odiljon Oxundadaevich QC Physics This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief. IIUM Press, International Islamic University Malaysia 2018-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/67747/1/67747_About%20the%20Silicon%20Sensitivity%20of%20the%20Deep.pdf application/pdf en http://irep.iium.edu.my/67747/7/67747_About%20the%20silicon%20sensitivity_scopus.pdf application/pdf en http://irep.iium.edu.my/67747/12/67747%20ABOUT%20THE%20SILICON%20SENSITIVITY%20%20WOS.pdf Tursunov, Ikromjon Gulamovich and Okhunov, Abdurahim and Mamatkarimov, Odiljon Oxundadaevich (2018) About the silicon sensitivity of the deep level with alternating pressure. IIUM Engineering Journal, 19 (2). pp. 164-171. ISSN 1511-788X E-ISSN 2289-7860 http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/794/663 10.31436/iiumej.v19i2.794 |
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QC Physics Tursunov, Ikromjon Gulamovich Okhunov, Abdurahim Mamatkarimov, Odiljon Oxundadaevich About the silicon sensitivity of the deep level with alternating pressure |
description |
This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief. |
format |
Article |
author |
Tursunov, Ikromjon Gulamovich Okhunov, Abdurahim Mamatkarimov, Odiljon Oxundadaevich |
author_facet |
Tursunov, Ikromjon Gulamovich Okhunov, Abdurahim Mamatkarimov, Odiljon Oxundadaevich |
author_sort |
Tursunov, Ikromjon Gulamovich |
title |
About the silicon sensitivity of the deep level with alternating pressure |
title_short |
About the silicon sensitivity of the deep level with alternating pressure |
title_full |
About the silicon sensitivity of the deep level with alternating pressure |
title_fullStr |
About the silicon sensitivity of the deep level with alternating pressure |
title_full_unstemmed |
About the silicon sensitivity of the deep level with alternating pressure |
title_sort |
about the silicon sensitivity of the deep level with alternating pressure |
publisher |
IIUM Press, International Islamic University Malaysia |
publishDate |
2018 |
url |
http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/1/67747_About%20the%20Silicon%20Sensitivity%20of%20the%20Deep.pdf http://irep.iium.edu.my/67747/7/67747_About%20the%20silicon%20sensitivity_scopus.pdf http://irep.iium.edu.my/67747/12/67747%20ABOUT%20THE%20SILICON%20SENSITIVITY%20%20WOS.pdf |
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2023-09-18T21:36:10Z |
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2023-09-18T21:36:10Z |
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1777412834644197376 |