About the silicon sensitivity of the deep level with alternating pressure
This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English English English |
| Published: |
IIUM Press, International Islamic University Malaysia
2018
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/ http://irep.iium.edu.my/67747/1/67747_About%20the%20Silicon%20Sensitivity%20of%20the%20Deep.pdf http://irep.iium.edu.my/67747/7/67747_About%20the%20silicon%20sensitivity_scopus.pdf http://irep.iium.edu.my/67747/12/67747%20ABOUT%20THE%20SILICON%20SENSITIVITY%20%20WOS.pdf |
| Summary: | This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief. |
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