Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch bet...

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Main Authors:	Tanasta, Z., Muhamad, Pauziah, Kuwano, Noriyuki, Mohd Yatim, Norfazrina Hayati, Unuh, Mohd Hishamuddin
Format:	Conference or Workshop Item
Language:	English English
Published:	Institute of Physics Publishing 2018
Subjects:	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
Online Access:	http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf

id	iium-65199
recordtype	eprints
spelling	iium-651992018-07-26T09:25:16Z http://irep.iium.edu.my/65199/ Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem. Institute of Physics Publishing 2018-03-16 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf application/pdf en http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf Tanasta, Z. and Muhamad, Pauziah and Kuwano, Noriyuki and Mohd Yatim, Norfazrina Hayati and Unuh, Mohd Hishamuddin (2018) Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment. In: 3rd International Conference on Mechanical, Manufacturing and Process Plant Engineering 2017, ICMMPE 2017, 22nd–23rd November 2017, Parkroyal HotelBatu Ferringhi, Penang; Malaysia. http://iopscience.iop.org/article/10.1088/1757-899X/328/1/012019/pdf 10.1088/1757-899X/328/1/012019
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
spellingShingle	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
description	Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.
format	Conference or Workshop Item
author	Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin
author_facet	Tanasta, Z. Muhamad, Pauziah Kuwano, Noriyuki Mohd Yatim, Norfazrina Hayati Unuh, Mohd Hishamuddin
author_sort	Tanasta, Z.
title	Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_short	Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_full	Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_fullStr	Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_full_unstemmed	Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
title_sort	reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
publisher	Institute of Physics Publishing
publishDate	2018
url	http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf
first_indexed	2023-09-18T21:32:30Z
last_indexed	2023-09-18T21:32:30Z
_version_	1777412604927410176

Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment

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