Reduction of defects on microstructure aluminium nitride using high temperature annealing heat treatment
Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch bet...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
Institute of Physics Publishing
2018
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/ http://irep.iium.edu.my/65199/1/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_conference%20article.pdf http://irep.iium.edu.my/65199/2/65199_Reduction%20of%20Defects%20on%20Microstructure%20Aluminium_scopus.pdf |
| Summary: | Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as
components in functional devices. Besides good thermal conductivity, it also has a high band gap in
emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However,
lattice mismatch between both materials has caused defects to exist along the microstructure of AlN
thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment
has been proved by the previous researcher to be the best method to improve the microstructure of
Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two
hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using
Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature
of 1500 ℃. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as
inversion domain. Therefore, this paper is about to extract the matters occurred during the process of
producing high quality Aluminium Nitride thin films and the ways to overcome this problem. |
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