Electrical characterization of commercial power MOSFET under electron radiation

This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms...

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Main Authors:	Ayub, Wan Nurhasana, Hasbullah, Nurul Fadzlin, Rashid, Abdul Aish Abdallah
Format:	Article
Language:	English English
Published:	American Scientific Publishers 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf

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recordtype	eprints
spelling	iium-628292018-07-10T18:20:43Z http://irep.iium.edu.my/62829/ Electrical characterization of commercial power MOSFET under electron radiation Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah TK Electrical engineering. Electronics Nuclear engineering This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage. American Scientific Publishers 2017-11 Article PeerReviewed application/pdf en http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf application/pdf en http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf Ayub, Wan Nurhasana and Hasbullah, Nurul Fadzlin and Rashid, Abdul Aish Abdallah (2017) Electrical characterization of commercial power MOSFET under electron radiation. Indonesian Journal of Electrical Engineering and Computer Science, 8 (2). pp. 462-466. ISSN 2502-4752 E-ISSN 2502-4760 http://www.iaescore.com/journals/index.php/IJEECS/article/viewFile/10015/7649 10.11591/ijeecs.v8.i2.pp462-466
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah Electrical characterization of commercial power MOSFET under electron radiation
description	This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiationinduced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage.
format	Article
author	Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah
author_facet	Ayub, Wan Nurhasana Hasbullah, Nurul Fadzlin Rashid, Abdul Aish Abdallah
author_sort	Ayub, Wan Nurhasana
title	Electrical characterization of commercial power MOSFET under electron radiation
title_short	Electrical characterization of commercial power MOSFET under electron radiation
title_full	Electrical characterization of commercial power MOSFET under electron radiation
title_fullStr	Electrical characterization of commercial power MOSFET under electron radiation
title_full_unstemmed	Electrical characterization of commercial power MOSFET under electron radiation
title_sort	electrical characterization of commercial power mosfet under electron radiation
publisher	American Scientific Publishers
publishDate	2017
url	http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/ http://irep.iium.edu.my/62829/1/62829_Electrical%20characterization%20of%20commercial_article.pdf http://irep.iium.edu.my/62829/2/62829_Electrical%20characterization%20of%20commercial_scopus.pdf
first_indexed	2023-09-18T21:29:01Z
last_indexed	2023-09-18T21:29:01Z
_version_	1777412385634516992

Electrical characterization of commercial power MOSFET under electron radiation

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