Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electro...

Full description

Bibliographic Details
Main Authors:	Ani, Mohd Hanafi, Helmi, F, Herman, Sukreen Hana, Syed Abu Bakar, Syed Noh
Format:	Conference or Workshop Item
Language:	English English
Published:	IOP Publishing 2018
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf

id	iium-62457
recordtype	eprints
spelling	iium-624572018-06-29T04:06:40Z http://irep.iium.edu.my/62457/ Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh TA401 Materials of engineering and construction Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods. IOP Publishing 2018-01-30 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf application/pdf en http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf Ani, Mohd Hanafi and Helmi, F and Herman, Sukreen Hana and Syed Abu Bakar, Syed Noh (2018) Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application. In: International Conference on Advances in Manufacturing and Materials Engineering (ICAMME 2017), 8th–9th August 2017, Kuala Lumpur, Malaysia. http://iopscience.iop.org/article/10.1088/1757-899X/290/1/012088/pdf doi:10.1088/1757-899X/290/1/012088
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA401 Materials of engineering and construction
spellingShingle	TA401 Materials of engineering and construction Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
description	Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.
format	Conference or Workshop Item
author	Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh
author_facet	Ani, Mohd Hanafi Helmi, F Herman, Sukreen Hana Syed Abu Bakar, Syed Noh
author_sort	Ani, Mohd Hanafi
title	Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
title_short	Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
title_full	Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
title_fullStr	Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
title_full_unstemmed	Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
title_sort	resistive switching of cu/cu2o junction fabricated using simple thermal oxidation at 423 k for memristor application
publisher	IOP Publishing
publishDate	2018
url	http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf
first_indexed	2023-09-18T21:28:30Z
last_indexed	2023-09-18T21:28:30Z
_version_	1777412352980811776

Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

Similar Items