Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application
Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electro...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IOP Publishing
2018
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/ http://irep.iium.edu.my/62457/1/paper%20fadirul%202018.pdf http://irep.iium.edu.my/62457/7/62457%20Resistive%20switching%20of%20Cu%20SCOPUS.pdf |
| Summary: | Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM,
and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous
studies using other methods. |
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