APA (7th ed.) Citation

Ani, M. H., Helmi, F., Herman, S. H., & Syed Abu Bakar, S. N. (2018). Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application. IOP Publishing.

Chicago Style (17th ed.) Citation

Ani, Mohd Hanafi, F. Helmi, Sukreen Hana Herman, and Syed Noh Syed Abu Bakar. Resistive Switching of Cu/Cu2O Junction Fabricated Using simple Thermal Oxidation at 423 K for Memristor Application. IOP Publishing, 2018.

MLA (8th ed.) Citation

Ani, Mohd Hanafi, et al. Resistive Switching of Cu/Cu2O Junction Fabricated Using simple Thermal Oxidation at 423 K for Memristor Application. IOP Publishing, 2018.