A K-band switched-line phase shifter using novel low-voltage low-loss RF-MEMS switch
—A low-voltage low-loss K-band 3-bit MEMS switched-line phase shifter is presented in this work. The phase shifter is constructed by novel shunt capacitive RF-MEMS switches and coplanar waveguide lines on a high-resistivity silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage = 3.04...
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2017
|
| Subjects: | |
| Online Access: | http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/ http://irep.iium.edu.my/61953/1/61953-A%20K-Band%20Switched-Line%20Phase.pdf http://irep.iium.edu.my/61953/2/61953-A%20K-band%20switched-line%20phase%20shifter-SCOPUS.pdf |
| Summary: | —A low-voltage low-loss K-band 3-bit MEMS
switched-line phase shifter is presented in this work. The phase
shifter is constructed by novel shunt capacitive RF-MEMS
switches and coplanar waveguide lines on a high-resistivity
silicon substrate. A low-voltage RF-MEMS switch (pull-in voltage
= 3.04V) is employed and exhibits good RF characteristics by
using T-match technique where its insertion loss and isolation is -
0.1291dB and -28.75dB, respectively at frequency of 20GHz. The
3-bit MEMS phase shifter is assembled by three single-bit units
(namely, 45°-bit, 90°-bit and 180°-bit) of switched-line structures;
the average phase error and average insertion loss is 0.2445° and
-2.447dB, respectively, at 20GHz; its return loss is better than
10dB at a wideband frequency range of up to 20GHz. The whole
design area is 6mm*4mm |
|---|