Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed s...

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Main Authors:	Sirat, Mohd Shukri, Ismail, Edhuan, Purwanto, Hadi, Mohd Abid, Mohd Asyadi Azam, Ani, Mohd Hanafi
Format:	Article
Language:	English English
Published:	Penerbit Universiti Kebangsaan Malaysia 2017
Subjects:	TA401 Materials of engineering and construction TP155 Chemical engineering
Online Access:	http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf

id	iium-60671
recordtype	eprints
spelling	iium-606712018-05-04T08:46:16Z http://irep.iium.edu.my/60671/ Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi TA401 Materials of engineering and construction TP155 Chemical engineering The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article PeerReviewed application/pdf en http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf application/pdf en http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf Sirat, Mohd Shukri and Ismail, Edhuan and Purwanto, Hadi and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2017) Growth conditions of graphene grown in Chemical Vapour Deposition (CVD). Sains Malaysiana, 46 (7). pp. 1033-1038. ISSN 0126-6039 http://www.ukm.my/jsm/pdf_files/SM-PDF-46-7-2017/04%20Mohamad%20Shukri%20Sirat.pdf 10.17576/jsm-2017-4607-04
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA401 Materials of engineering and construction TP155 Chemical engineering
spellingShingle	TA401 Materials of engineering and construction TP155 Chemical engineering Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
description	The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.
format	Article
author	Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi
author_facet	Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi
author_sort	Sirat, Mohd Shukri
title	Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_short	Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_full	Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_fullStr	Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_full_unstemmed	Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_sort	growth conditions of graphene grown in chemical vapour deposition (cvd)
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2017
url	http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/ http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf
first_indexed	2023-09-18T21:26:00Z
last_indexed	2023-09-18T21:26:00Z
_version_	1777412195633594368

Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)

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