Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform

The increase in frequency spectrum for wireless communication system has led to the growing interest in thin film electroacoustic technology that scales favorably upon miniaturization. Non-ferroelectric piezoelectric thin films such as Zinc Oxide is one of the most promising material for Complementa...

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Main Authors:	Md Ralib, Aliza Aini, Mortada, Ossama, Orlianges, Jean Christophe, Crunteanu, Aurelian, Chatras, Matthieu, Nordin, Anis Nurashikin
Format:	Article
Language:	English English English
Published:	Springer New York LLC 2017
Subjects:	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
Online Access:	http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/1/57290_Enhanced%20piezoelectric.pdf http://irep.iium.edu.my/57290/2/57290_Enhanced%20piezoelectric_WOS.pdf http://irep.iium.edu.my/57290/3/57290_Enhanced%20piezoelectric_SCOPUS_new.pdf

id	iium-57290
recordtype	eprints
spelling	iium-572902018-04-20T08:48:46Z http://irep.iium.edu.my/57290/ Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform Md Ralib, Aliza Aini Mortada, Ossama Orlianges, Jean Christophe Crunteanu, Aurelian Chatras, Matthieu Nordin, Anis Nurashikin TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery The increase in frequency spectrum for wireless communication system has led to the growing interest in thin film electroacoustic technology that scales favorably upon miniaturization. Non-ferroelectric piezoelectric thin films such as Zinc Oxide is one of the most promising material for Complementary Metal Oxide Semiconductor-Microelectromechanical system (CMOS-MEMS) integration due to its silicon compatibility and good piezoelectric properties. This paper compares ZnO and Al doped ZnO (AZO) thin films performance characteristics when applied as CMOS-based surface acoustic wave (SAW) resonators. The interdigitated electrodes were fabricated using 0.35 μm CMOS technology followed by piezoelectric thin film deposition and probe pad patterning. Pure ZnO and AZO with 2 wt% Al2O3 have been prepared by pulse laser deposition and RF magnetron sputtering respectively. Both deposited ZnO and AZO thin films exhibited preferential crystalline growth in 002 direction. EDS analysis confirmed the incorporation of aluminium in zinc oxide thin films. High frequency electrical measurement results revealed that the devices with AZO thin film have enhanced performances as compared to devices based on ZnO thin film. It is shown that the insertion loss for AZO thin film was reduced from −65.1 to −53.5 dB and the quality factor was enhanced from 11.33 to 25.81. More significantly, the electromechanical coupling coefficient and piezoelectric coefficient were enhanced from κ = 0.044–0.069% and d31 = 5.00 to 5.41 pm/V for AZO devices compared to those based on ZnO devices, respectively. One possible explanation of these enhanced piezoelectric properties comes from the almost ideal c-axis orientation of AZO thin film as compared to pure ZnO thin films. Our results suggest that the AZO thin film can be a better candidate for surface acoustic wave resonator using the CMOS-MEMS platform. Springer New York LLC 2017-06-01 Article NonPeerReviewed application/pdf en http://irep.iium.edu.my/57290/1/57290_Enhanced%20piezoelectric.pdf application/pdf en http://irep.iium.edu.my/57290/2/57290_Enhanced%20piezoelectric_WOS.pdf application/pdf en http://irep.iium.edu.my/57290/3/57290_Enhanced%20piezoelectric_SCOPUS_new.pdf Md Ralib, Aliza Aini and Mortada, Ossama and Orlianges, Jean Christophe and Crunteanu, Aurelian and Chatras, Matthieu and Nordin, Anis Nurashikin (2017) Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform. Journal of Materials Science: Materials in Electronics, 28 (12). pp. 9132-9138. ISSN 0957-4522 E-ISSN 1573-482X https://link.springer.com/article/10.1007/s10854-017-6647-6 10.1007/s10854-017-6647-6
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery
spellingShingle	TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Md Ralib, Aliza Aini Mortada, Ossama Orlianges, Jean Christophe Crunteanu, Aurelian Chatras, Matthieu Nordin, Anis Nurashikin Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
description	The increase in frequency spectrum for wireless communication system has led to the growing interest in thin film electroacoustic technology that scales favorably upon miniaturization. Non-ferroelectric piezoelectric thin films such as Zinc Oxide is one of the most promising material for Complementary Metal Oxide Semiconductor-Microelectromechanical system (CMOS-MEMS) integration due to its silicon compatibility and good piezoelectric properties. This paper compares ZnO and Al doped ZnO (AZO) thin films performance characteristics when applied as CMOS-based surface acoustic wave (SAW) resonators. The interdigitated electrodes were fabricated using 0.35 μm CMOS technology followed by piezoelectric thin film deposition and probe pad patterning. Pure ZnO and AZO with 2 wt% Al2O3 have been prepared by pulse laser deposition and RF magnetron sputtering respectively. Both deposited ZnO and AZO thin films exhibited preferential crystalline growth in 002 direction. EDS analysis confirmed the incorporation of aluminium in zinc oxide thin films. High frequency electrical measurement results revealed that the devices with AZO thin film have enhanced performances as compared to devices based on ZnO thin film. It is shown that the insertion loss for AZO thin film was reduced from −65.1 to −53.5 dB and the quality factor was enhanced from 11.33 to 25.81. More significantly, the electromechanical coupling coefficient and piezoelectric coefficient were enhanced from κ = 0.044–0.069% and d31 = 5.00 to 5.41 pm/V for AZO devices compared to those based on ZnO devices, respectively. One possible explanation of these enhanced piezoelectric properties comes from the almost ideal c-axis orientation of AZO thin film as compared to pure ZnO thin films. Our results suggest that the AZO thin film can be a better candidate for surface acoustic wave resonator using the CMOS-MEMS platform.
format	Article
author	Md Ralib, Aliza Aini Mortada, Ossama Orlianges, Jean Christophe Crunteanu, Aurelian Chatras, Matthieu Nordin, Anis Nurashikin
author_facet	Md Ralib, Aliza Aini Mortada, Ossama Orlianges, Jean Christophe Crunteanu, Aurelian Chatras, Matthieu Nordin, Anis Nurashikin
author_sort	Md Ralib, Aliza Aini
title	Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
title_short	Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
title_full	Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
title_fullStr	Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
title_full_unstemmed	Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform
title_sort	enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a cmos platform
publisher	Springer New York LLC
publishDate	2017
url	http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/ http://irep.iium.edu.my/57290/1/57290_Enhanced%20piezoelectric.pdf http://irep.iium.edu.my/57290/2/57290_Enhanced%20piezoelectric_WOS.pdf http://irep.iium.edu.my/57290/3/57290_Enhanced%20piezoelectric_SCOPUS_new.pdf
first_indexed	2023-09-18T21:20:57Z
last_indexed	2023-09-18T21:20:57Z
_version_	1777411878102761472

Enhanced piezoelectric properties of aluminium doped zinc oxide thin film for surface acoustic wave resonators on a CMOS platform

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