Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption

We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were investigated....

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Main Authors:	Ayob, Nur Idayu, Takeda, Sakura Nishino, Sakata, Tomohiro, Yoshikawa, Masaaki, Morita, Makoto, Daimon, Hiroshi
Format:	Article
Language:	English English
Published:	Japan Society of Applied Physics 2015
Subjects:	QC Physics T Technology (General)
Online Access:	http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/1/JJAPPublished.pdf http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf

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spelling	iium-569622018-01-04T08:50:23Z http://irep.iium.edu.my/56962/ Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi QC Physics T Technology (General) We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were investigated. We observed wider energy separations of subbands levels for the sample with a less number of FA and a higher impurity concentration. However, the observed energy levels and separations had smaller binding energy than those calculated by triangle potential approximation. We found that the discrepancies were due to the out-diffusion of Arsenic atoms from the sub-surface region of silicon via high temperature FA. The possible potential profile of the space charge layer after considering the out-diffusion of Arsenic dopant atoms at the subsurface region was proposed. Japan Society of Applied Physics 2015-06-01 Article PeerReviewed application/pdf en http://irep.iium.edu.my/56962/1/JJAPPublished.pdf application/pdf en http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf Ayob, Nur Idayu and Takeda, Sakura Nishino and Sakata, Tomohiro and Yoshikawa, Masaaki and Morita, Makoto and Daimon, Hiroshi (2015) Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption. Japanese Journal of Applied Physics, 54 (6). 065702-1-065702-7. ISSN 0021-4922 E-ISSN 1347-4065 http://iopscience.iop.org/article/10.7567/JJAP.54.065702/pdf 10.7567/JJAP.54.065702
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	QC Physics T Technology (General)
spellingShingle	QC Physics T Technology (General) Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
description	We investigated the dispersion structure of the hole subbands in vicinal Si(111)4 ' 1-In surfaces directly by angle-resolved photoelectron spectroscopy. In this study, three inversion layers with different impurity concentrations and numbers of times of flash annealing (FA) were investigated. We observed wider energy separations of subbands levels for the sample with a less number of FA and a higher impurity concentration. However, the observed energy levels and separations had smaller binding energy than those calculated by triangle potential approximation. We found that the discrepancies were due to the out-diffusion of Arsenic atoms from the sub-surface region of silicon via high temperature FA. The possible potential profile of the space charge layer after considering the out-diffusion of Arsenic dopant atoms at the subsurface region was proposed.
format	Article
author	Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi
author_facet	Ayob, Nur Idayu Takeda, Sakura Nishino Sakata, Tomohiro Yoshikawa, Masaaki Morita, Makoto Daimon, Hiroshi
author_sort	Ayob, Nur Idayu
title	Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
title_short	Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
title_full	Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
title_fullStr	Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
title_full_unstemmed	Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption
title_sort	unusual energy separation of subbands in si(111) p-channels induced by in adsorption
publisher	Japan Society of Applied Physics
publishDate	2015
url	http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/ http://irep.iium.edu.my/56962/1/JJAPPublished.pdf http://irep.iium.edu.my/56962/7/56962_Unusual%20energy%20separation_scopus.pdf
first_indexed	2023-09-18T21:20:27Z
last_indexed	2023-09-18T21:20:27Z
_version_	1777411846204030976

Unusual energy separation of subbands in Si(111) p-channels induced by In adsorption

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