Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot

Improvements of temperature dependence of certain characteristics of quantum dot solar cell using InN as active material of the device structure has been reported in this paper. A numerical analysis of temperature dependence of different parametric characteristics related to carriers within a quantu...

Full description

Bibliographic Details
Main Authors:	Al Humayun, Md. Abdullah, Khan, Sheroz, Alam, A. H. M. Zahirul, Yaacob, Mashkuri, AbdulMalek, MohamedFareq, Rashid, Mohd Abdur
Format:	Article
Language:	English English
Published:	www.ijrer.org 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/56859/ http://irep.iium.edu.my/56859/ http://irep.iium.edu.my/56859/1/5547-21465-1-PB.pdf http://irep.iium.edu.my/56859/7/56859_Improvement%20of%20Temperature%20Dependence_WOS.pdf

id	iium-56859
recordtype	eprints
spelling	iium-568592017-05-16T10:26:07Z http://irep.iium.edu.my/56859/ Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot Al Humayun, Md. Abdullah Khan, Sheroz Alam, A. H. M. Zahirul Yaacob, Mashkuri AbdulMalek, MohamedFareq Rashid, Mohd Abdur TK Electrical engineering. Electronics Nuclear engineering Improvements of temperature dependence of certain characteristics of quantum dot solar cell using InN as active material of the device structure has been reported in this paper. A numerical analysis of temperature dependence of different parametric characteristics related to carriers within a quantum dot solar cell has been carried out in this research work. Numerical analysis of these solar cell features have been performed using Group-III Nitride trios namely GaN, AlN and InN quantum dot as active layer material of solar cell structure. Among different parameters of quantum dot solar cell: drift length and the diffusion length have been analyzed along with the power loss of the carriers to complete the whole process. In this present research work effect of temperature on the characteristics of these parameters has been analyzed using mathematical approach. Numerical results obtained are compared for preferential outcomes. It is revealed from the comparison results that only the drift length of the carrier has been increased but the diffusion length and the power loss of the carriers have been minimized using InN quantum dot in the active layer of solar cell. Hence InN is the auspicious material to fabricate solar cell in upcoming decades. www.ijrer.org 2017-01 Article PeerReviewed application/pdf en http://irep.iium.edu.my/56859/1/5547-21465-1-PB.pdf application/pdf en http://irep.iium.edu.my/56859/7/56859_Improvement%20of%20Temperature%20Dependence_WOS.pdf Al Humayun, Md. Abdullah and Khan, Sheroz and Alam, A. H. M. Zahirul and Yaacob, Mashkuri and AbdulMalek, MohamedFareq and Rashid, Mohd Abdur (2017) Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot. International Journal of Renewable Energy Research, 7 (1). pp. 330-335. ISSN 1309-0127 http://www.ijrer.org/ijrer/index.php/ijrer/article/view/5547/pdf
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Al Humayun, Md. Abdullah Khan, Sheroz Alam, A. H. M. Zahirul Yaacob, Mashkuri AbdulMalek, MohamedFareq Rashid, Mohd Abdur Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
description	Improvements of temperature dependence of certain characteristics of quantum dot solar cell using InN as active material of the device structure has been reported in this paper. A numerical analysis of temperature dependence of different parametric characteristics related to carriers within a quantum dot solar cell has been carried out in this research work. Numerical analysis of these solar cell features have been performed using Group-III Nitride trios namely GaN, AlN and InN quantum dot as active layer material of solar cell structure. Among different parameters of quantum dot solar cell: drift length and the diffusion length have been analyzed along with the power loss of the carriers to complete the whole process. In this present research work effect of temperature on the characteristics of these parameters has been analyzed using mathematical approach. Numerical results obtained are compared for preferential outcomes. It is revealed from the comparison results that only the drift length of the carrier has been increased but the diffusion length and the power loss of the carriers have been minimized using InN quantum dot in the active layer of solar cell. Hence InN is the auspicious material to fabricate solar cell in upcoming decades.
format	Article
author	Al Humayun, Md. Abdullah Khan, Sheroz Alam, A. H. M. Zahirul Yaacob, Mashkuri AbdulMalek, MohamedFareq Rashid, Mohd Abdur
author_facet	Al Humayun, Md. Abdullah Khan, Sheroz Alam, A. H. M. Zahirul Yaacob, Mashkuri AbdulMalek, MohamedFareq Rashid, Mohd Abdur
author_sort	Al Humayun, Md. Abdullah
title	Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
title_short	Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
title_full	Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
title_fullStr	Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
title_full_unstemmed	Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot
title_sort	improvement of temperature dependence of carrier characteristics of quantum dot solar cell using inn quantum dot
publisher	www.ijrer.org
publishDate	2017
url	http://irep.iium.edu.my/56859/ http://irep.iium.edu.my/56859/ http://irep.iium.edu.my/56859/1/5547-21465-1-PB.pdf http://irep.iium.edu.my/56859/7/56859_Improvement%20of%20Temperature%20Dependence_WOS.pdf
first_indexed	2023-09-18T21:20:17Z
last_indexed	2023-09-18T21:20:17Z
_version_	1777411835425718272

Improvement of temperature dependence of carrier characteristics of quantum dot solar cell using InN quantum dot

Similar Items