Enhance TL response due to radiation defects in Ge doped silica preforms

Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results fr...

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Main Authors:	Ahmad Shaharuddin, Siti Shafiqah, Mohd Amin, Yusoff, Md. Nor, Roslan, Tamchek, Nizam, D.A, Bradley
Format:	Article
Language:	English
Published:	Elsevier Limited 2015
Subjects:	QC Physics
Online Access:	http://irep.iium.edu.my/55550/ http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf

id	iium-55550
recordtype	eprints
spelling	iium-555502017-02-13T16:32:55Z http://irep.iium.edu.my/55550/ Enhance TL response due to radiation defects in Ge doped silica preforms Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley QC Physics Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results from the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at 890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response, with a sensitivity of 75 nC/Gy. Elsevier Limited 2015-02-26 Article PeerReviewed application/pdf en http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf Ahmad Shaharuddin, Siti Shafiqah and Mohd Amin, Yusoff and Md. Nor, Roslan and Tamchek, Nizam and D.A, Bradley (2015) Enhance TL response due to radiation defects in Ge doped silica preforms. Radiation Physics and Chemistry. pp. 87-90. ISSN 0969-806X (In Press)
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	QC Physics
spellingShingle	QC Physics Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley Enhance TL response due to radiation defects in Ge doped silica preforms
description	Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results from the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at 890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response, with a sensitivity of 75 nC/Gy.
format	Article
author	Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley
author_facet	Ahmad Shaharuddin, Siti Shafiqah Mohd Amin, Yusoff Md. Nor, Roslan Tamchek, Nizam D.A, Bradley
author_sort	Ahmad Shaharuddin, Siti Shafiqah
title	Enhance TL response due to radiation defects in Ge doped silica preforms
title_short	Enhance TL response due to radiation defects in Ge doped silica preforms
title_full	Enhance TL response due to radiation defects in Ge doped silica preforms
title_fullStr	Enhance TL response due to radiation defects in Ge doped silica preforms
title_full_unstemmed	Enhance TL response due to radiation defects in Ge doped silica preforms
title_sort	enhance tl response due to radiation defects in ge doped silica preforms
publisher	Elsevier Limited
publishDate	2015
url	http://irep.iium.edu.my/55550/ http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf
first_indexed	2023-09-18T21:18:30Z
last_indexed	2023-09-18T21:18:30Z
_version_	1777411724084772864

Enhance TL response due to radiation defects in Ge doped silica preforms

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