Enhance TL response due to radiation defects in Ge doped silica preforms
Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results fr...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier Limited
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/55550/ http://irep.iium.edu.my/55550/1/shafiqah_enhance%20TL%20response.pdf |
| Summary: | Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated
using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were
fabricated, obtained using a different flow rate and deposition temperature for each case. Results from
the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of
oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were
compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both
sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed
the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at
890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response,
with a sensitivity of 75 nC/Gy. |
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