NEGF-based transport phenomena for semiconduncting CNTFET

A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is...

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Main Authors:	Farhana, Soheli, Alam, A H M Zahirul, Khan, Sheroz, Motakabber, S M A
Format:	Conference or Workshop Item
Language:	English English
Published:	IEEE 2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/12/53226.pdf http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf

id	iium-53226
recordtype	eprints
spelling	iium-532262017-03-09T02:39:22Z http://irep.iium.edu.my/53226/ NEGF-based transport phenomena for semiconduncting CNTFET Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A TK Electrical engineering. Electronics Nuclear engineering A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA. IEEE 2015 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/53226/12/53226.pdf application/pdf en http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf Farhana, Soheli and Alam, A H M Zahirul and Khan, Sheroz and Motakabber, S M A (2015) NEGF-based transport phenomena for semiconduncting CNTFET. In: 2015 5th National Symposium on Information Technology: Towards New Smart World (NSITNSW), 17th-19th February 2015, Riyadh, Saudi Arab. http://ieeexplore.ieee.org/document/7176386/ 10.1109/NSITNSW.2015.7176386
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A NEGF-based transport phenomena for semiconduncting CNTFET
description	A transport phenomenon of carbon nanotube field effect transistor (CNTFET) is proposed in this paper. Non-Equilibrium Green's Function (NEGF) is used to design the proposed model. CNT chiral vector is straightly connected with CNTFET transport properties by this method. The ballistic CNTFET is realized by the carrier transport in the conduction and valence band. This phenomenon of CNT introduces a excellent quality of semiconducting material. The output current voltage characteristic is analyzed and simulated in this paper. From the simulated results, the behavior of the ON states current of semiconducting CNT is realized in 69.5μA.
format	Conference or Workshop Item
author	Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A
author_facet	Farhana, Soheli Alam, A H M Zahirul Khan, Sheroz Motakabber, S M A
author_sort	Farhana, Soheli
title	NEGF-based transport phenomena for semiconduncting CNTFET
title_short	NEGF-based transport phenomena for semiconduncting CNTFET
title_full	NEGF-based transport phenomena for semiconduncting CNTFET
title_fullStr	NEGF-based transport phenomena for semiconduncting CNTFET
title_full_unstemmed	NEGF-based transport phenomena for semiconduncting CNTFET
title_sort	negf-based transport phenomena for semiconduncting cntfet
publisher	IEEE
publishDate	2015
url	http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/ http://irep.iium.edu.my/53226/12/53226.pdf http://irep.iium.edu.my/53226/13/53226-NEGF-based%20transport%20phenomena%20for%20semiconduncting%20CNTFET_SCOPUS.pdf
first_indexed	2023-09-18T21:15:21Z
last_indexed	2023-09-18T21:15:21Z
_version_	1777411525418418176

NEGF-based transport phenomena for semiconduncting CNTFET

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