Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch

Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (na...

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Main Authors:	Ma, Li Ya, Soin, Norhayati, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English English
Published:	2016
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/8/52755-new.pdf http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf

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recordtype	eprints
spelling	iium-527552016-11-30T07:40:57Z http://irep.iium.edu.my/52755/ Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (namely, pull-in and pull-out voltages). The pull voltages have been simulated by using a triangular voltage input; and the actuation time has been obtained by using a step-up bias voltage. The charge effect on the pull voltages due to parasitic charges has been discussed. And the effect of dielectric surface roughness on the switch performance is also deliberated. The study results show that in order to develop a long-lifetime RF-MEMS switch, a small actuation voltage with a flat-dielectric-layer design is preferred. In the end a two-step bipolar rectangular waveform as bias voltage has been proposed additionally for long-lifetime purpose. 2016 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/52755/8/52755-new.pdf application/pdf en http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2016) Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch. In: 12th IEEE International Conference on Semiconductor Electronics (ICSE 2016), 17th-19th August 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7573580/ 10.1109/SMELEC.2016.7573580
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
description	Dielectric charges cause stiction problems in most capacitive RF-MEMS switches, creating a major reliability issue during production. A new method based on finite-element- method simulation is developed in this paper to analyze the dielectric charging effect on the RF-MEMS switch’s pull voltages (namely, pull-in and pull-out voltages). The pull voltages have been simulated by using a triangular voltage input; and the actuation time has been obtained by using a step-up bias voltage. The charge effect on the pull voltages due to parasitic charges has been discussed. And the effect of dielectric surface roughness on the switch performance is also deliberated. The study results show that in order to develop a long-lifetime RF-MEMS switch, a small actuation voltage with a flat-dielectric-layer design is preferred. In the end a two-step bipolar rectangular waveform as bias voltage has been proposed additionally for long-lifetime purpose.
format	Conference or Workshop Item
author	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_facet	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_sort	Ma, Li Ya
title	Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
title_short	Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
title_full	Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
title_fullStr	Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
title_full_unstemmed	Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch
title_sort	theoretical and simulated investigation of dielectric charging effect on a capacitive rf-mems switch
publishDate	2016
url	http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/ http://irep.iium.edu.my/52755/8/52755-new.pdf http://irep.iium.edu.my/52755/9/52755-Theoretical%20and%20simulated%20investigation%20of%20dielectric%20charging%20effect%20on%20a%20capacitive%20RF-MEMS%20switch_SCOPUS.pdf
first_indexed	2023-09-18T21:14:43Z
last_indexed	2023-09-18T21:14:43Z
_version_	1777411485895491584

Theoretical and simulated investigation of dielectric charging effect on a capacitive RF-MEMS switch

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