Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation

The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of...

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Main Authors: Hedzir, Anati Syahirah, Muridan, Norasmahan, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Other Authors: Fathelrahman, Ahmed Ibrahim
Format: Conference or Workshop Item
Language:English
Published: Penerbit UMT, Universiti Malaysia Terengganu (UMT) 2016
Subjects:
Online Access:http://irep.iium.edu.my/52339/
http://irep.iium.edu.my/52339/
http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf
id iium-52339
recordtype eprints
spelling iium-523392017-01-16T03:54:20Z http://irep.iium.edu.my/52339/ Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation Hedzir, Anati Syahirah Muridan, Norasmahan Abdullah, Yusof Hasbullah, Nurul Fadzlin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of visible light communication and as an illuminating source in space. However, due to the presence of high energy electron in space, these LEDs are vulnerable towards electron radiation. Hence, this paper focus on the electrical characterization of commercial Gallium Nitride (GaN) LEDs subjected to electron radiation dose ranged from 1MGy to 10MGy. The devices that were used in this study are Kingbright GaN Blue LEDs (part #L-53MBC) and Vishay GaN Blue LEDs (part #TLHB5400). Capacitance-voltage (C-V) characteristics of commercial GaN LEDs before and after irradiation were investigated. As the radiation dose increase, the amount of capacitance and doping concentration decreases. This is believed due to deactivation of dopants atoms in the bulk. Penerbit UMT, Universiti Malaysia Terengganu (UMT) Fathelrahman, Ahmed Ibrahim Mohamed Ibrahim, Mohamed Izham Wetheimer, Albert I 2016 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf Hedzir, Anati Syahirah and Muridan, Norasmahan and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2016) Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu. http://umtas2016.umt.edu.my/?page_id=210
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Hedzir, Anati Syahirah
Muridan, Norasmahan
Abdullah, Yusof
Hasbullah, Nurul Fadzlin
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
description The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of visible light communication and as an illuminating source in space. However, due to the presence of high energy electron in space, these LEDs are vulnerable towards electron radiation. Hence, this paper focus on the electrical characterization of commercial Gallium Nitride (GaN) LEDs subjected to electron radiation dose ranged from 1MGy to 10MGy. The devices that were used in this study are Kingbright GaN Blue LEDs (part #L-53MBC) and Vishay GaN Blue LEDs (part #TLHB5400). Capacitance-voltage (C-V) characteristics of commercial GaN LEDs before and after irradiation were investigated. As the radiation dose increase, the amount of capacitance and doping concentration decreases. This is believed due to deactivation of dopants atoms in the bulk.
author2 Fathelrahman, Ahmed Ibrahim
author_facet Fathelrahman, Ahmed Ibrahim
Hedzir, Anati Syahirah
Muridan, Norasmahan
Abdullah, Yusof
Hasbullah, Nurul Fadzlin
format Conference or Workshop Item
author Hedzir, Anati Syahirah
Muridan, Norasmahan
Abdullah, Yusof
Hasbullah, Nurul Fadzlin
author_sort Hedzir, Anati Syahirah
title Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
title_short Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
title_full Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
title_fullStr Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
title_full_unstemmed Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
title_sort capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
publisher Penerbit UMT, Universiti Malaysia Terengganu (UMT)
publishDate 2016
url http://irep.iium.edu.my/52339/
http://irep.iium.edu.my/52339/
http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf
first_indexed 2023-09-18T21:14:09Z
last_indexed 2023-09-18T21:14:09Z
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