Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation
The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of...
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Penerbit UMT, Universiti Malaysia Terengganu (UMT)
2016
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Online Access: | http://irep.iium.edu.my/52339/ http://irep.iium.edu.my/52339/ http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf |
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iium-523392017-01-16T03:54:20Z http://irep.iium.edu.my/52339/ Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation Hedzir, Anati Syahirah Muridan, Norasmahan Abdullah, Yusof Hasbullah, Nurul Fadzlin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The effects of electron radiation on commercially fabricated gallium nitride light emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high breakdown voltage, making it suitable to be used in an extreme environment. LED based on this material is used as part of visible light communication and as an illuminating source in space. However, due to the presence of high energy electron in space, these LEDs are vulnerable towards electron radiation. Hence, this paper focus on the electrical characterization of commercial Gallium Nitride (GaN) LEDs subjected to electron radiation dose ranged from 1MGy to 10MGy. The devices that were used in this study are Kingbright GaN Blue LEDs (part #L-53MBC) and Vishay GaN Blue LEDs (part #TLHB5400). Capacitance-voltage (C-V) characteristics of commercial GaN LEDs before and after irradiation were investigated. As the radiation dose increase, the amount of capacitance and doping concentration decreases. This is believed due to deactivation of dopants atoms in the bulk. Penerbit UMT, Universiti Malaysia Terengganu (UMT) Fathelrahman, Ahmed Ibrahim Mohamed Ibrahim, Mohamed Izham Wetheimer, Albert I 2016 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf Hedzir, Anati Syahirah and Muridan, Norasmahan and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2016) Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu. http://umtas2016.umt.edu.my/?page_id=210 |
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TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
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TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Hedzir, Anati Syahirah Muridan, Norasmahan Abdullah, Yusof Hasbullah, Nurul Fadzlin Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
description |
The effects of electron radiation on commercially fabricated gallium nitride light
emitting diodes (LEDs) is of interest due to its high tolerance against temperature and high
breakdown voltage, making it suitable to be used in an extreme environment. LED based on
this material is used as part of visible light communication and as an illuminating source in
space. However, due to the presence of high energy electron in space, these LEDs are
vulnerable towards electron radiation. Hence, this paper focus on the electrical characterization
of commercial Gallium Nitride (GaN) LEDs subjected to electron radiation dose ranged from
1MGy to 10MGy. The devices that were used in this study are Kingbright GaN Blue LEDs
(part #L-53MBC) and Vishay GaN Blue LEDs (part #TLHB5400). Capacitance-voltage (C-V)
characteristics of commercial GaN LEDs before and after irradiation were investigated. As the
radiation dose increase, the amount of capacitance and doping concentration decreases. This is
believed due to deactivation of dopants atoms in the bulk. |
author2 |
Fathelrahman, Ahmed Ibrahim |
author_facet |
Fathelrahman, Ahmed Ibrahim Hedzir, Anati Syahirah Muridan, Norasmahan Abdullah, Yusof Hasbullah, Nurul Fadzlin |
format |
Conference or Workshop Item |
author |
Hedzir, Anati Syahirah Muridan, Norasmahan Abdullah, Yusof Hasbullah, Nurul Fadzlin |
author_sort |
Hedzir, Anati Syahirah |
title |
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
title_short |
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
title_full |
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
title_fullStr |
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
title_full_unstemmed |
Capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
title_sort |
capacitance-voltage characterization of commercial gallium nitride diodes subjected to electron radiation |
publisher |
Penerbit UMT, Universiti Malaysia Terengganu (UMT) |
publishDate |
2016 |
url |
http://irep.iium.edu.my/52339/ http://irep.iium.edu.my/52339/ http://irep.iium.edu.my/52339/1/52339_Capacitance-voltage%20characterization.pdf |
first_indexed |
2023-09-18T21:14:09Z |
last_indexed |
2023-09-18T21:14:09Z |
_version_ |
1777411449809797120 |