Parametric study of sputtering microchannels via focused ion beam (FIB)

Focused ion beams (FIB) are used in microfabrication and have certain advantages compared to photolithography and other micromachining technologies. The main advantage is that it can be used for direct writing/patterning of the target material. FIB can create a variety of geometric features, has the...

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Main Authors: Mohd Shahar, Siti Fatimah, Jaafar, Israd Hakim, Ali, Mohammad Yeakub
Format: Article
Language:English
English
Published: Asian Research Publishing Network (ARPN) 2015
Subjects:
Online Access:http://irep.iium.edu.my/50752/
http://irep.iium.edu.my/50752/
http://irep.iium.edu.my/50752/1/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29.pdf
http://irep.iium.edu.my/50752/2/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29_SCOPUS.pdf
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spelling iium-507522016-12-05T08:19:18Z http://irep.iium.edu.my/50752/ Parametric study of sputtering microchannels via focused ion beam (FIB) Mohd Shahar, Siti Fatimah Jaafar, Israd Hakim Ali, Mohammad Yeakub TS Manufactures Focused ion beams (FIB) are used in microfabrication and have certain advantages compared to photolithography and other micromachining technologies. The main advantage is that it can be used for direct writing/patterning of the target material. FIB can create a variety of geometric features, has the ability to process without masks, and can accommodate the patterning of a variety of materials. In high aspect micromilling, the beam current, beam diameter as well as the dwell time are some of the parameters that need to be taken into account. In this research, different beam currents with respective beam diameters were used to investigate the optimum parameters that can be achieved in milling microchannels. The target material that was used in this experiment was Silicon < 100 >. The wafer used had 250 μm thicknesses. The results observed were the channel width, gap between the channels, and the channel depth. The main trend observed was that when the beam current increases, the depth and the channels' width also increase whereas the channels' gap decreases. Defects such as side wall tapering effect and swelling were noticed from the experiments that used the unsuitable parameters because the values of beam current are not enough to sputter the silicon surface. The best beam current use that give the nearest result to the actual pattern is around 7.0-8.0 pA. Extended research need to be conducted to see the effect on the surface roughness of the channels. Asian Research Publishing Network (ARPN) 2015-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/50752/1/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29.pdf application/pdf en http://irep.iium.edu.my/50752/2/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29_SCOPUS.pdf Mohd Shahar, Siti Fatimah and Jaafar, Israd Hakim and Ali, Mohammad Yeakub (2015) Parametric study of sputtering microchannels via focused ion beam (FIB). ARPN Journal of Engineering and Applied Sciences, 10 (23). pp. 17397-17401. ISSN 1819-6608 http://www.arpnjournals.org/jeas/research_papers/rp_2015/jeas_1215_3183.pdf
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
English
topic TS Manufactures
spellingShingle TS Manufactures
Mohd Shahar, Siti Fatimah
Jaafar, Israd Hakim
Ali, Mohammad Yeakub
Parametric study of sputtering microchannels via focused ion beam (FIB)
description Focused ion beams (FIB) are used in microfabrication and have certain advantages compared to photolithography and other micromachining technologies. The main advantage is that it can be used for direct writing/patterning of the target material. FIB can create a variety of geometric features, has the ability to process without masks, and can accommodate the patterning of a variety of materials. In high aspect micromilling, the beam current, beam diameter as well as the dwell time are some of the parameters that need to be taken into account. In this research, different beam currents with respective beam diameters were used to investigate the optimum parameters that can be achieved in milling microchannels. The target material that was used in this experiment was Silicon < 100 >. The wafer used had 250 μm thicknesses. The results observed were the channel width, gap between the channels, and the channel depth. The main trend observed was that when the beam current increases, the depth and the channels' width also increase whereas the channels' gap decreases. Defects such as side wall tapering effect and swelling were noticed from the experiments that used the unsuitable parameters because the values of beam current are not enough to sputter the silicon surface. The best beam current use that give the nearest result to the actual pattern is around 7.0-8.0 pA. Extended research need to be conducted to see the effect on the surface roughness of the channels.
format Article
author Mohd Shahar, Siti Fatimah
Jaafar, Israd Hakim
Ali, Mohammad Yeakub
author_facet Mohd Shahar, Siti Fatimah
Jaafar, Israd Hakim
Ali, Mohammad Yeakub
author_sort Mohd Shahar, Siti Fatimah
title Parametric study of sputtering microchannels via focused ion beam (FIB)
title_short Parametric study of sputtering microchannels via focused ion beam (FIB)
title_full Parametric study of sputtering microchannels via focused ion beam (FIB)
title_fullStr Parametric study of sputtering microchannels via focused ion beam (FIB)
title_full_unstemmed Parametric study of sputtering microchannels via focused ion beam (FIB)
title_sort parametric study of sputtering microchannels via focused ion beam (fib)
publisher Asian Research Publishing Network (ARPN)
publishDate 2015
url http://irep.iium.edu.my/50752/
http://irep.iium.edu.my/50752/
http://irep.iium.edu.my/50752/1/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29.pdf
http://irep.iium.edu.my/50752/2/50752_Parametric_study_of_sputtering_microchannels_via_focused_ion_beam_%28FIB%29_SCOPUS.pdf
first_indexed 2023-09-18T21:11:48Z
last_indexed 2023-09-18T21:11:48Z
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