Multi-frequency CMOS oscillator based on CMOS MEMS SAW resonator
This paper presents the design and simulation results for a multi-frequency oscillator based on comple- mentary metal oxide semiconductor (CMOS) microelec- tromechanical systems (MEMS) surface acoustic wave (SAW) resonator. Multi-frequency oscillator is simulated using 0.35 μm CMOS technology. The o...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Springer International Publishing AG
2015
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/50310/ http://irep.iium.edu.my/50310/ http://irep.iium.edu.my/50310/ http://irep.iium.edu.my/50310/1/art%253A10.1007%252Fs00542-014-2249-x.pdf http://irep.iium.edu.my/50310/4/50310_Multi-frequency_CMOS_oscillator_based_on_CMOS_MEMS_SAW_resonator_WOS.pdf |
| Summary: | This paper presents the design and simulation results for a multi-frequency oscillator based on comple- mentary metal oxide semiconductor (CMOS) microelec- tromechanical systems (MEMS) surface acoustic wave (SAW) resonator. Multi-frequency oscillator is simulated using 0.35 μm CMOS technology. The oscillator operated at 600 and 1.76 GHz. The multi-frequency oscillator shows phase noise performance of −67.35 and −92.83 dBc/Hz at 100 kHz offset frequency for 600 MHz and 1.76 GHz, respectively, during simulation. The pierce circuit topol- ogy was used to sustain the oscillation from CMOS SAW resonator. The sustaining circuit was design and fabricated in 0.35 μm CMOS technology process with 3.3 V supply. The measured S21 of sustaining circuit topology are 6 and 2 dB at 1.76 GHz and 600 MHz, respectively. The phase responses for 1.76 GHz and 600 MHz are −50° and –200° correspondingly. |
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