Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure

An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work. This SAW resonator uses zinc oxide (ZnO) as its piezoelectric thin film. The resonator's interdigitated electr...

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Main Authors:	Md Ralib @ Md Raghib, Aliza 'Aini, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/1/49589.pdf

id	iium-49589
recordtype	eprints
spelling	iium-495892018-06-19T04:30:17Z http://irep.iium.edu.my/49589/ Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work. This SAW resonator uses zinc oxide (ZnO) as its piezoelectric thin film. The resonator's interdigitated electrodes were designed such that it produces 1 GHz resonance frequency. Finite element simulation of the CMOS SAW resonator was conducted using COMSOL Mutliphysics™. Three different analyses namely eigenfrequency, frequency domain and time domain analyses were conducted. The thicknesses of ZnO were varied from 2 μm to 5.5 μm with step size of 0.5 μm. Simulation results indicate maximum electromechanical coupling coefficient is achieved when normalized thickness is in the range of 0.63 <; (hzno/λ) <; 0.78. Experimental measurements were conducted on the fabricated CMOS SAW resonator and compared with the simulation results. IEEE 2014-04-01 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/49589/1/49589.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin (2014) Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure. In: 2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 1st-4th Apr. 2014, Cannes, French. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7056641&tag=1 10.1109/DTIP.2014.7056641
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
description	An analysis of the electromechanical coupling coefficient for surface acoustic wave (SAW) devices developed in complementary metal oxide semiconductor (CMOS) is presented in this work. This SAW resonator uses zinc oxide (ZnO) as its piezoelectric thin film. The resonator's interdigitated electrodes were designed such that it produces 1 GHz resonance frequency. Finite element simulation of the CMOS SAW resonator was conducted using COMSOL Mutliphysics™. Three different analyses namely eigenfrequency, frequency domain and time domain analyses were conducted. The thicknesses of ZnO were varied from 2 μm to 5.5 μm with step size of 0.5 μm. Simulation results indicate maximum electromechanical coupling coefficient is achieved when normalized thickness is in the range of 0.63 <; (hzno/λ) <; 0.78. Experimental measurements were conducted on the fabricated CMOS SAW resonator and compared with the simulation results.
format	Conference or Workshop Item
author	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin
author_facet	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin
author_sort	Md Ralib @ Md Raghib, Aliza 'Aini
title	Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
title_short	Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
title_full	Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
title_fullStr	Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
title_full_unstemmed	Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure
title_sort	analysis of electromechanical coupling coefficient of surface acoustic wave resonator in zno piezoelectric thin film structure
publisher	IEEE
publishDate	2014
url	http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/ http://irep.iium.edu.my/49589/1/49589.pdf
first_indexed	2023-09-18T21:10:06Z
last_indexed	2023-09-18T21:10:06Z
_version_	1777411194656653312

Analysis of electromechanical coupling coefficient of surface acoustic wave resonator in ZnO piezoelectric thin film structure

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