Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method

DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the de...

Full description

Bibliographic Details
Main Authors:	Fauzi, Fatin Bazilah, Ani, Mohd Hanafi, Othman, Raihan, Ahmad Azhar, Ahmad Zahirani, Mohamed, Mohd Ambri, Herman, Sukreen Hana
Format:	Conference or Workshop Item
Language:	English English
Published:	Institute of Physics 2015
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/1/Fabrication_of_flexible_Au-zno-ito_memristor_.pdf http://irep.iium.edu.my/48239/3/48239_Fabrication%20of%20flexible%20Au_SCOPUS%20CONF.pdf

id	iium-48239
recordtype	eprints
spelling	iium-482392017-12-14T03:02:50Z http://irep.iium.edu.my/48239/ Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method Fauzi, Fatin Bazilah Ani, Mohd Hanafi Othman, Raihan Ahmad Azhar, Ahmad Zahirani Mohamed, Mohd Ambri Herman, Sukreen Hana TA401 Materials of engineering and construction DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the deposition of zinc oxide (ZnO) on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate by electrodeposition. Metallic Zn film was deposited on substrates with varying deposition time from 15 to 120 seconds in very dilute zinc chloride (ZnCl2) aqueous and subsequently oxidized at 150C to form ZnO/ITO coated PET junction. The deposited thin film was characterized via x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results from I-V measurement show the deposited ZnO exhibits pinched hysteresis loop. The hysteresis loop becomes smaller with increasing deposition time. The 15 seconds electrodeposition gave the largest hysteresis loop and largest value of resistive switching ratio of 1.067. The result of the synthesized ZnO on the flexible substrate can be one of the alternatives to replace the current memory system as the flexible memory system. Institute of Physics 2015 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/48239/1/Fabrication_of_flexible_Au-zno-ito_memristor_.pdf application/pdf en http://irep.iium.edu.my/48239/3/48239_Fabrication%20of%20flexible%20Au_SCOPUS%20CONF.pdf Fauzi, Fatin Bazilah and Ani, Mohd Hanafi and Othman, Raihan and Ahmad Azhar, Ahmad Zahirani and Mohamed, Mohd Ambri and Herman, Sukreen Hana (2015) Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method. In: 4th International Conference on Electronic Devices, Systems and Applications 2015 (ICEDSA), 14th - 15th December 2014, Kuala Lumpur. http://iopscience.iop.org/article/10.1088/1757-899X/99/1/012002/pdf doi:10.1088/1757-899X/99/1/012002
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TA401 Materials of engineering and construction
spellingShingle	TA401 Materials of engineering and construction Fauzi, Fatin Bazilah Ani, Mohd Hanafi Othman, Raihan Ahmad Azhar, Ahmad Zahirani Mohamed, Mohd Ambri Herman, Sukreen Hana Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
description	DRAM has been approaching its maximum physical limit due to the demand of smaller size and higher capacity memory resistor. The researchers have discovered the abilities of a memristor, a Non Volatile Memory (NVM) that could overcome the size and capacity obstacles. This paper discussed about the deposition of zinc oxide (ZnO) on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate by electrodeposition. Metallic Zn film was deposited on substrates with varying deposition time from 15 to 120 seconds in very dilute zinc chloride (ZnCl2) aqueous and subsequently oxidized at 150C to form ZnO/ITO coated PET junction. The deposited thin film was characterized via x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results from I-V measurement show the deposited ZnO exhibits pinched hysteresis loop. The hysteresis loop becomes smaller with increasing deposition time. The 15 seconds electrodeposition gave the largest hysteresis loop and largest value of resistive switching ratio of 1.067. The result of the synthesized ZnO on the flexible substrate can be one of the alternatives to replace the current memory system as the flexible memory system.
format	Conference or Workshop Item
author	Fauzi, Fatin Bazilah Ani, Mohd Hanafi Othman, Raihan Ahmad Azhar, Ahmad Zahirani Mohamed, Mohd Ambri Herman, Sukreen Hana
author_facet	Fauzi, Fatin Bazilah Ani, Mohd Hanafi Othman, Raihan Ahmad Azhar, Ahmad Zahirani Mohamed, Mohd Ambri Herman, Sukreen Hana
author_sort	Fauzi, Fatin Bazilah
title	Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
title_short	Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
title_full	Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
title_fullStr	Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
title_full_unstemmed	Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method
title_sort	fabrication of flexible au/zno/ito/pet memristor using dilute electrodeposition method
publisher	Institute of Physics
publishDate	2015
url	http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/ http://irep.iium.edu.my/48239/1/Fabrication_of_flexible_Au-zno-ito_memristor_.pdf http://irep.iium.edu.my/48239/3/48239_Fabrication%20of%20flexible%20Au_SCOPUS%20CONF.pdf
first_indexed	2023-09-18T21:08:28Z
last_indexed	2023-09-18T21:08:28Z
_version_	1777411092399521792

Fabrication of flexible Au/ZnO/ITO/PET memristor using dilute electrodeposition method

Similar Items