Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure

Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure

The performance of surface acoustic wave resonator in CMOS technology for single and double electrode (IDT) structure is presented. Interdigitated electrodes (IDT) structure in surface acoustic wave (SAW) resonator is the most crucial component for excitation of SAW devices. Possible configurations...

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Bibliographic Details
Main Authors: Md Ralib @ Md Raghib, Aliza 'Aini, Nordin, Anis Nurashikin, Hashim, Uda
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/46638/
http://irep.iium.edu.my/46638/
http://irep.iium.edu.my/46638/1/46638.pdf
id iium-46638
recordtype eprints
spelling iium-466382016-04-15T09:34:42Z http://irep.iium.edu.my/46638/ Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Hashim, Uda TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The performance of surface acoustic wave resonator in CMOS technology for single and double electrode (IDT) structure is presented. Interdigitated electrodes (IDT) structure in surface acoustic wave (SAW) resonator is the most crucial component for excitation of SAW devices. Possible configurations for the IDT are single electrode and double electrode. The performance of the resonator for single and double electrode is compared at a frequency range of 0.5 GHz to 1 GHz. 2D Finite element modeling of the CMOS SAW resonator was simulated using COMSOL Multiphysics® for three step analysis eigen frequency, frequency domain and time domain analysis. The structure and dimension of the device is based on 0.18 μm RF CMOS process where the pattern of IDT is fabricated using standard CMOS fabrication process. The simulated results shows high quality factor in the order of thousands for double electrode CMOS SAW resonator compared to single electrode CMOS SAW resonator. 2013 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/46638/1/46638.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin and Hashim, Uda (2013) Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure. In: 2013 IEEE Regional Symposium on Micro and Nano Electronics (RSM 2013), 25th-27th October 2013, Langkawi, Malaysia. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6706458&tag=1
repository_type Digital Repository
institution_category Local University
institution International Islamic University Malaysia
building IIUM Repository
collection Online Access
language English
topic TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
Hashim, Uda
Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
description The performance of surface acoustic wave resonator in CMOS technology for single and double electrode (IDT) structure is presented. Interdigitated electrodes (IDT) structure in surface acoustic wave (SAW) resonator is the most crucial component for excitation of SAW devices. Possible configurations for the IDT are single electrode and double electrode. The performance of the resonator for single and double electrode is compared at a frequency range of 0.5 GHz to 1 GHz. 2D Finite element modeling of the CMOS SAW resonator was simulated using COMSOL Multiphysics® for three step analysis eigen frequency, frequency domain and time domain analysis. The structure and dimension of the device is based on 0.18 μm RF CMOS process where the pattern of IDT is fabricated using standard CMOS fabrication process. The simulated results shows high quality factor in the order of thousands for double electrode CMOS SAW resonator compared to single electrode CMOS SAW resonator.
format Conference or Workshop Item
author Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
Hashim, Uda
author_facet Md Ralib @ Md Raghib, Aliza 'Aini
Nordin, Anis Nurashikin
Hashim, Uda
author_sort Md Ralib @ Md Raghib, Aliza 'Aini
title Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
title_short Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
title_full Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
title_fullStr Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
title_full_unstemmed Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure
title_sort finite element modeling of saw resonator in cmos technology for single and double interdigitated electrode (idt) structure
publishDate 2013
url http://irep.iium.edu.my/46638/
http://irep.iium.edu.my/46638/
http://irep.iium.edu.my/46638/1/46638.pdf
first_indexed 2023-09-18T21:06:23Z
last_indexed 2023-09-18T21:06:23Z
_version_ 1777410961590714368

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