Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator

CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the l...

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Main Authors:	Md Ralib @ Md Raghib, Aliza 'Aini, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English
Published:	2013
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/1/46637.pdf

id	iium-46637
recordtype	eprints
spelling	iium-466372016-04-15T09:34:00Z http://irep.iium.edu.my/46637/ Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the loss. In this work, a SAW resonator was developed using AZO/Al/Si layers in 0.18 μm CMOS technology. AZO was chosen as the piezoelectric layer to achieve high electromechanical coupling coefficient for good SAW performance. This paper highlights the comparative analysis of two different piezoelectric materials: pure Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) for GHz CMOS MEMS SAW resonator. S parameter measurements were performed for the fabricated designs to get the resonance frequencies and the electromechanical coupling coefficients were recalculated. The design and finite element modeling simulation was conducted using COMSOLTM to verify the performance of the resonator using both Al-doped ZnO and pure ZnO via the simulation results. 2013-04-16 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/46637/1/46637.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin (2013) Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator. In: 2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2013), 16th-18th Apr. 2013, Barcelona, Spain. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6559389
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
description	CMOS integration in RF MEMS have become dominant due to the growing demand of mobile and wireless communication system. Usage of off chip resonators is not efficient since it leads to large area and high interfacing loss. Integration of CMOS with SAW resonators is a possible solution to reduce the loss. In this work, a SAW resonator was developed using AZO/Al/Si layers in 0.18 μm CMOS technology. AZO was chosen as the piezoelectric layer to achieve high electromechanical coupling coefficient for good SAW performance. This paper highlights the comparative analysis of two different piezoelectric materials: pure Zinc Oxide (ZnO) and Aluminium doped Zinc Oxide (AZO) for GHz CMOS MEMS SAW resonator. S parameter measurements were performed for the fabricated designs to get the resonance frequencies and the electromechanical coupling coefficients were recalculated. The design and finite element modeling simulation was conducted using COMSOLTM to verify the performance of the resonator using both Al-doped ZnO and pure ZnO via the simulation results.
format	Conference or Workshop Item
author	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin
author_facet	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin
author_sort	Md Ralib @ Md Raghib, Aliza 'Aini
title	Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
title_short	Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
title_full	Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
title_fullStr	Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
title_full_unstemmed	Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator
title_sort	comparative analysis of zinc oxide and aluminium doped zno for ghz cmos mems surface acoustic wave resonator
publishDate	2013
url	http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/ http://irep.iium.edu.my/46637/1/46637.pdf
first_indexed	2023-09-18T21:06:23Z
last_indexed	2023-09-18T21:06:23Z
_version_	1777410961433427968

Comparative analysis of zinc oxide and aluminium doped ZnO for GHz CMOS MEMS surface acoustic wave resonator

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