Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch

This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight be...

Full description

Bibliographic Details
Main Authors:	Ma, Li Ya, Soin, Norhayati, Nordin, Anis Nurashikin
Format:	Conference or Workshop Item
Language:	English
Published:	2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf

id	iium-46632
recordtype	eprints
spelling	iium-466322018-06-20T01:14:35Z http://irep.iium.edu.my/46632/ Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation – IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz. 2014-04 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2014) Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch. In: Source of the Document DTIP 2014 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 7056641, 1-4 April 2014, Cannes, France. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7056645&tag=1
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
description	This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The device is a capacitive shunt- connection switch, which uses four folded beams to support a big membrane above the signal transmission line. Another four straight beams provide the bias voltage. The switch is designed in 0.35μm complementary metal oxide semiconductor (CMOS) process and is electrostatically actuated by a low pull-in voltage of 2.9V. Taguchi Method is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant and a robust design. The pull-in voltage, vertical displacement, and maximum von Mises stress distribution was simulated using finite element modeling (FEM) simulation – IntelliSuite v8.7® software. With Pareto ANOVA technique, the percentage contribution of each geometric parameter to the spring constant and stress distribution was calculated; and then the optimized parameters were got as t=0.877μm, w=4μm, L1=40μm, L2=50μm and L3=70μm. RF performance of the switch was simulated by AWR Design Environment 10® and yielded isolation and insertion loss of -23dB and -9.2dB respectively at 55GHz.
format	Conference or Workshop Item
author	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_facet	Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin
author_sort	Ma, Li Ya
title	Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
title_short	Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
title_full	Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
title_fullStr	Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
title_full_unstemmed	Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch
title_sort	design and optimization of allow-voltage shunt capacitive rf-mems switch
publishDate	2014
url	http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/ http://irep.iium.edu.my/46632/1/C_-_2014_-_Design_and_Optimization_of_a_Low-Votlage_Shunt_Capacitive_RF-MEMS_Switch.pdf
first_indexed	2023-09-18T21:06:22Z
last_indexed	2023-09-18T21:06:22Z
_version_	1777410960669016064

Design and optimization of alLow-voltage shunt capacitive RF-MEMS switch

Similar Items