Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures

This paper studies the effects of neutron radiation on the electrical behaviour and leakage current mec hanism of quantum dot-in-a-well (DWELL) semiconductor diodes with fluence ranging from 3 to neutron/cm . After neutron irradiation, the forward bias and reverse bias le akage currents sho...

Full description

Bibliographic Details
Main Authors:	Ahmad Fauzi, D., Md Rashid, N. K. A., Mohamed Zin, M. R., Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	IEEE 2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/5/46553.pdf http://irep.iium.edu.my/46553/8/46553_Neutron%20radiation%20effects%20on%20the%20electrical_Scopus.pdf

id	iium-46553
recordtype	eprints
spelling	iium-465532018-05-05T05:17:14Z http://irep.iium.edu.my/46553/ Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures Ahmad Fauzi, D. Md Rashid, N. K. A. Mohamed Zin, M. R. Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering This paper studies the effects of neutron radiation on the electrical behaviour and leakage current mec hanism of quantum dot-in-a-well (DWELL) semiconductor diodes with fluence ranging from 3 to neutron/cm . After neutron irradiation, the forward bias and reverse bias le akage currents showed significant rise approximately of up to two orders of magnitude which is believed to be attributed to the presence of displacement damage induced traps. The ideality factor of the forward bias leakage current corresponding to all neutron fluenceirradiationswerefoundtobecloseto2,suggestingthatthe forward bias current mechanism is large ly due to trap-assisted generation-recombination (TAGR )ofcarriers.Subsequently,it is also observed that the capacit ances reduced after irradiations which were further shown to be due to th e deep carrier trapping effects and the Neutron Transmutation Doping effects (NTD). From the temperature dependence measurements, it is found that the reverse bias leakage curren tmechanismsoftheirradiated samplesareprimarilyattributedtotwoprocess;TAGRofcarriers with emission from the traps assisted by the Frenkel-Poole (F-P).The traps due to both mechanis ms were derived and shown to increase with neutron fluence. IEEE 2015-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/46553/5/46553.pdf application/pdf en http://irep.iium.edu.my/46553/8/46553_Neutron%20radiation%20effects%20on%20the%20electrical_Scopus.pdf Ahmad Fauzi, D. and Md Rashid, N. K. A. and Mohamed Zin, M. R. and Hasbullah, Nurul Fadzlin (2015) Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures. IEEE Transactions on Nuclear Science, 62 (6). pp. 3324-3329. ISSN 0018-9499 http://dx.doi.org/10.1109/TNS.2015.2478450 doi:10.1109/TNS.2015.2478450
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ahmad Fauzi, D. Md Rashid, N. K. A. Mohamed Zin, M. R. Hasbullah, Nurul Fadzlin Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
description	This paper studies the effects of neutron radiation on the electrical behaviour and leakage current mec hanism of quantum dot-in-a-well (DWELL) semiconductor diodes with fluence ranging from 3 to neutron/cm . After neutron irradiation, the forward bias and reverse bias le akage currents showed significant rise approximately of up to two orders of magnitude which is believed to be attributed to the presence of displacement damage induced traps. The ideality factor of the forward bias leakage current corresponding to all neutron fluenceirradiationswerefoundtobecloseto2,suggestingthatthe forward bias current mechanism is large ly due to trap-assisted generation-recombination (TAGR )ofcarriers.Subsequently,it is also observed that the capacit ances reduced after irradiations which were further shown to be due to th e deep carrier trapping effects and the Neutron Transmutation Doping effects (NTD). From the temperature dependence measurements, it is found that the reverse bias leakage curren tmechanismsoftheirradiated samplesareprimarilyattributedtotwoprocess;TAGRofcarriers with emission from the traps assisted by the Frenkel-Poole (F-P).The traps due to both mechanis ms were derived and shown to increase with neutron fluence.
format	Article
author	Ahmad Fauzi, D. Md Rashid, N. K. A. Mohamed Zin, M. R. Hasbullah, Nurul Fadzlin
author_facet	Ahmad Fauzi, D. Md Rashid, N. K. A. Mohamed Zin, M. R. Hasbullah, Nurul Fadzlin
author_sort	Ahmad Fauzi, D.
title	Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
title_short	Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
title_full	Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
title_fullStr	Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
title_full_unstemmed	Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures
title_sort	neutron radiation effects on the electrical characteristics of inas/gaas quantum dot-in-a-well structures
publisher	IEEE
publishDate	2015
url	http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/ http://irep.iium.edu.my/46553/5/46553.pdf http://irep.iium.edu.my/46553/8/46553_Neutron%20radiation%20effects%20on%20the%20electrical_Scopus.pdf
first_indexed	2023-09-18T21:06:17Z
last_indexed	2023-09-18T21:06:17Z
_version_	1777410954572595200

Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in-a-well structures

Similar Items