Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch

This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The capacitive RF-MEMS switch is electrostatically actuated. The structure contains a coplanar waveguide, a big suspended membrane, four folded beams to support the mem...

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Main Authors:	Ma, Li Ya, Nordin, Anis Nurashikin, Soin, Norhayati
Format:	Article
Language:	English English
Published:	Springer Berlin / Heidelberg 2015
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/45283/ http://irep.iium.edu.my/45283/ http://irep.iium.edu.my/45283/1/Microsystems_2015.pdf http://irep.iium.edu.my/45283/4/45283_Design%2C%20optimization%20and%20simulation_scopus.pdf

id	iium-45283
recordtype	eprints
spelling	iium-452832017-04-13T03:38:47Z http://irep.iium.edu.my/45283/ Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The capacitive RF-MEMS switch is electrostatically actuated. The structure contains a coplanar waveguide, a big suspended membrane, four folded beams to support the membrane and four straight beams to provide the bias voltage. The switch is designed in standard 0.35 µm complementary metal oxide semiconductor process and has a very low pull-in voltage of 3.04 V. Taguchi method and weighted principal component analysis is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant, low pull-in voltage, and a robust design. The optimized parameters were obtained as w = 2.5 µm, L1 = 30 µm, L2 = 30 µm and L3 = 65 µm. The mechanical and electrical behaviours of the RF-MEMS switch were simulated by the finite element modeling in software of COMSOL Multiphysics 4.3® and IntelliSuite v8.7®. RF performance of the switch was obtained by simulation results, which are insertion loss of −5.65 dB and isolation of −24.38 dB at 40 GHz. Springer Berlin / Heidelberg 2015-06-16 Article PeerReviewed application/pdf en http://irep.iium.edu.my/45283/1/Microsystems_2015.pdf application/pdf en http://irep.iium.edu.my/45283/4/45283_Design%2C%20optimization%20and%20simulation_scopus.pdf Ma, Li Ya and Nordin, Anis Nurashikin and Soin, Norhayati (2015) Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch. Microsystems Technologies. pp. 1-13. ISSN 0946-7076 (Print), 1432-1858 (Online) http://link.springer.com/article/10.1007/s00542-015-2585-5
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
description	This paper presents the design, optimization and simulation of a radio frequency (RF) micro-electromechanical system (MEMS) switch. The capacitive RF-MEMS switch is electrostatically actuated. The structure contains a coplanar waveguide, a big suspended membrane, four folded beams to support the membrane and four straight beams to provide the bias voltage. The switch is designed in standard 0.35 µm complementary metal oxide semiconductor process and has a very low pull-in voltage of 3.04 V. Taguchi method and weighted principal component analysis is employed to optimize the geometric parameters of the beams, in order to obtain a low spring constant, low pull-in voltage, and a robust design. The optimized parameters were obtained as w = 2.5 µm, L1 = 30 µm, L2 = 30 µm and L3 = 65 µm. The mechanical and electrical behaviours of the RF-MEMS switch were simulated by the finite element modeling in software of COMSOL Multiphysics 4.3® and IntelliSuite v8.7®. RF performance of the switch was obtained by simulation results, which are insertion loss of −5.65 dB and isolation of −24.38 dB at 40 GHz.
format	Article
author	Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati
author_facet	Ma, Li Ya Nordin, Anis Nurashikin Soin, Norhayati
author_sort	Ma, Li Ya
title	Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
title_short	Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
title_full	Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
title_fullStr	Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
title_full_unstemmed	Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch
title_sort	design, optimization and simulation of a low‑voltage shunt capacitive rf‑mems switch
publisher	Springer Berlin / Heidelberg
publishDate	2015
url	http://irep.iium.edu.my/45283/ http://irep.iium.edu.my/45283/ http://irep.iium.edu.my/45283/1/Microsystems_2015.pdf http://irep.iium.edu.my/45283/4/45283_Design%2C%20optimization%20and%20simulation_scopus.pdf
first_indexed	2023-09-18T21:04:28Z
last_indexed	2023-09-18T21:04:28Z
_version_	1777410840775884800

Design, optimization and simulation of a low‑voltage shunt capacitive RF‑MEMS switch

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