High frequency CNTFET-based logic gate

Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model t...

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Main Authors:	Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/1/RSM2015.pdf

id	iium-44632
recordtype	eprints
spelling	iium-446322016-05-23T02:46:39Z http://irep.iium.edu.my/44632/ High frequency CNTFET-based logic gate Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate’s transfer characteristics. 2015-08 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/44632/1/RSM2015.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) High frequency CNTFET-based logic gate. In: 10th IEEE 2015 Regional Symposium on Micro and Nanoelectronics (RSM 2015), 19-21 August 2015, Kuala Terengganu. http://ieeemalaysia-eds.org/rsm2015/
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz High frequency CNTFET-based logic gate
description	Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate’s transfer characteristics.
format	Conference or Workshop Item
author	Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz
author_facet	Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz
author_sort	Farhana, Soheli
title	High frequency CNTFET-based logic gate
title_short	High frequency CNTFET-based logic gate
title_full	High frequency CNTFET-based logic gate
title_fullStr	High frequency CNTFET-based logic gate
title_full_unstemmed	High frequency CNTFET-based logic gate
title_sort	high frequency cntfet-based logic gate
publishDate	2015
url	http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/ http://irep.iium.edu.my/44632/1/RSM2015.pdf
first_indexed	2023-09-18T21:03:26Z
last_indexed	2023-09-18T21:03:26Z
_version_	1777410775531388928

High frequency CNTFET-based logic gate

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